Results 81 to 90 of about 4,164,324 (286)
Advanced Functional Materials, EarlyView.Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee +10 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva +5 more
wiley +1 more source
A CMOS bandgap reference for low voltage applications
, 2022 S.106-109 : Lit.A bandgap reference circuit which operates at supply voltages down to 1.2V is presented. It offers a reference voltage of 82mV and a reference current of 2myA with a temperature dependence of less than 100ppm/K in a temperature range form
Hammerschmidt, D. +4 more
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Self‐Adaptive Gradient Interphase Enables Durable Solid‐State Lithium Metal Batteries
Advanced Functional Materials, EarlyView.This work presents a machine learning‐guided interfacial design that forms a self‐adaptive graded interphase on lithium metal anode. A B105M40 composite interlayer evolves into lithiophilic, porous, and fast‐ion‐conducting phases, enabling intimate contact, dendrite suppression, and uniform lithium deposition.
Hongmin Liu +9 more
wiley +1 more source
A single-event transient tolerant bandgap reference utilizing dual-modular-redundant (DMR) technique
Nuclear Engineering and Technology—Bandgap reference (BG) is a crucial component commonly adopted in analog and mixed-signal systems. BG is vulnerable in space applications, which can lead to signal degradation and even subsequent module failure when subjected to heavy-ion strikes.
Jingtian Liu +6 more
doaj +1 more source
, 2008 This work deals with principles of design low noise bandgap reference using multiple in the process EPI92. The voltage reference is described and theoretic analysis noise performances is made.
Knop, Jaroslav
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Low power CMOS Bandgap Reference circuit
, 2014 Bandgap Reference (BGR) circuit is to yield a precise and accurate dc voltage which has minimum variation over an external influence. The objective of this BGR paperwork lies on using two different temperature-compensation techniques which are based on ...
Lee, Lini, L. Lee, S. K. Koh, Koh, S. K.
core +1 more source
A sub-1V Bandgap Voltage Reference in 32nm FinFET Technology [PDF]
, 2009 The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a ...
A.J. Annema +7 more
core +1 more source
Digitally Printed Eco‐Friendly Electronic Devices
Advanced Functional Materials, EarlyView.Fabrication of electronics using eco‐friendly materials through digital printing routes is a promising strategy for improving life cycle sustainability and reducing the environmental impacts of conventional manufacturing. This review highlights state‐of‐the‐art eco‐friendly materials, green ink formulations, various resource‐efficient digital printing ...
Nitheesh M. Nair +5 more
wiley +1 more source
Switched bandgap reference circuit
, 2021 Το αντικείμενο της παρούσας Μεταπτυχιακής Διπλωματικής Εργασίας, είναι η μελέτη και σχεδίαση κυκλωμάτων τάσης αναφοράς. Τα κυκλώματα τάσης αναφοράς – Bandgap reference αποτελούν βασικό τμήμα σε πλήθος ολοκληρωμένων κυκλωμάτων, καθώς παρέχουν σταθερή τάση
Μανέτα, Δανάη
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