Results 161 to 170 of about 4,670,173 (290)
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu +11 more
wiley +1 more source
Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]
Alshammari N, Rao MV, Li Q.
europepmc +1 more source
Advances in Halide Perovskites for Photon Radiation Detectors
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Non-Contact Measurement of LED Junction Temperature Based on Normalized Integral Width (NIW) of the Emission Spectrum. [PDF]
Jiang F, Qiu Y.
europepmc +1 more source
Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald +3 more
wiley +1 more source
Achieving 27.7% Efficiency with a Mechanically Stacked, Four-Terminal Perovskite/InGaAsP Tandem Solar Cell. [PDF]
Gupta B +8 more
europepmc +1 more source
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai +3 more
wiley +1 more source
Stabilizing 1.93-eV ultrawide-bandgap perovskites for efficient triple-junction solar cells. [PDF]
Kong W +17 more
europepmc +1 more source
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob +4 more
wiley +1 more source
Editorial for Special Issue "High-Reliability Semiconductor Devices and Integrated Circuits, 3rd Edition". [PDF]
Xu C, Liu Y, Chen Y.
europepmc +1 more source

