Results 41 to 50 of about 4,670,173 (290)

A start-up free 200nW bandgap voltage reference

, 2016
© 2016 IEEE. A low power cross-coupled bandgap voltage reference is proposed in this paper. Based on the suggested structure, a 9.8 ppm/°C temperature coefficient bandgap voltage reference across-50°C to 150°C temperature range with 1.8-V supply voltage ...
Chang, A, Yongkui Yang, Alan Chang, Chundong Wu, Wang, L, Lei Wang, Yang, Y, Xi Zhu, Goh, WL, Wu, C, Zhu, X, Wang Ling Goh   +11 more
core   +1 more source

Uniform Amorphization of Crystalline Silicon Surfaces Enabled by Deep Ultraviolet Femtosecond Laser Pulses

Advanced Engineering Materials, EarlyView.
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali, Magali Gregoire, Matys Guyard, Tatiana Itina, David Grojo, Pol Sopeña   +5 more
wiley   +1 more source

None Operational Amplifier (OPA) Based: Design of Analogous Bandgap Reference Voltage

MATEC Web of Conferences, 2018
By using 0.35-um CMOS process, this work achieves a design of analogous band-gap reference voltage circuit with low temperature coefficient. The proposed circuit operates at 3V and generates a reference current of 44 uA.
Chan Hao-Ping, Hung Yu-Cherng
doaj   +1 more source

Enhanced Ultrasound Transmission Through Aberration Layers Using Space‐Coiling Acoustic Metamaterials

Advanced Engineering Materials, EarlyView.
Enhancing ultrasound transmission through an aberration layer exhibiting mismatched impedance with the surrounding medium possesses great implications in imaging and treatment. In this study, we show that a space‐coiling acoustic metamaterial with judiciously tailored structural profile can help improve impedance matching.
Maral Ghanami, Hengzhe Ren, Erqian Dong, Ashkan Ghanbarzadeh‐Dagheyan, Chen Shen   +4 more
wiley   +1 more source

A Low Phase Noise Crystal Oscillator with a Fast Start-Up Bandgap Reference for WLAN Applications

Applied Sciences, 2023
This article presents the design and implementation of a 40 MHz crystal oscillator (XO) with low phase noise, based on the 55 nm CMOS process, for wireless transceiver systems, particularly those used in Wireless Local Area Network (WLAN).
Peng Wu, Peng Li, Xi Chen, Peng Cheng, Jian Zhu   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

X‐Functionality–Driven Photocatalytic Hydrogen Evolution in 2D 4‐X‐PEA2SnI4 Perovskites

Advanced Functional Materials, EarlyView.
We report a water‐based synthesis of 2D 4‐X‐PEA2SnI4 perovskite microcrystals with prominent photocatalytic (PC) activity for H2 production. The synergy between organic functionalization and HI‐derived iodide scavenges holes suppress octahedral distortion, and favor electron accumulation, enabling a PC H2 evolution ∼20 µmol·g−1 and long‐term stability ...
Taeyeon Kim, Gayoung Seo, Seong Yeon Park, Juwon Jang, Yunho Ahn, Samiksha Mukesh Jain, Samrat Das Adhikari, Harumi Correa‐Leiva, Ignacio Utreras‐Asenjo, Oscar A. Douglas‐Gallardo, Carina Pareja‐Rivera, Kayoung Cho, Byeongsung Kim, Jhonatan Rodriguez‐Pereira, Eunseo Choi, JaeHong Park, Jin Ho Bang, Danilo H. Jara‐Quinteros, Sixto Giménez, Seog Joon Yoon, Andrés F. Gualdrón‐Reyes, Iván Mora‐Seró   +21 more
wiley   +1 more source

Trimmable bandgap reference circuit with exponential curvature compensation

Journal of Electronic Science and Technology, 2023
This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gain β of the bipolar junction transistor (BJT) and the temperature as well as reduce the influence of
Hong-Zhuan Chen, Fei Chu, Wen-Tao Lu, Tie-Liang Zhang, Wen-Chang Li, Wei Gao   +5 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Hollow core fiber with an octave spanning bandgap [PDF]

, 2010
We thoroughly compare the out-of-plane bandgaps generated by three realistic two-dimensional lattices: a triangular and a square arrangement of holes and a triangular arrangement of rods.
Poletti, Francesco, Francesco Poletti
core   +1 more source