Results 1 to 10 of about 3,360,387 (243)

EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2020
Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C.
Ja. A. Solovjov, V. A. Pilipenko
doaj   +1 more source

Investigation of X-ray radiation response to electrical properties of Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode

open access: yesJournal of New Results in Science, 2023
Diodes are exposed to radiation in many operating environments, and it is important to investigate the radiation effect. In this study, the impact of X-ray radiation on the electrical properties of Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode was ...
Güven Çankaya   +2 more
doaj   +1 more source

Effect of Chemical Impurities on Space Charge Density at the Interface Between Polyethylene and Copper

open access: yesIEEE Access, 2022
The estimation of charge density distribution in polyethylene (PE) especially at the interface region with conducting material such as copper (Cu) is essential at high field conduction.
Mohammed El-Shahat, Hussein I. Anis
doaj   +1 more source

Comment on ‘Physics-based representations for machine learning properties of chemical reactions’

open access: yesMachine Learning: Science and Technology, 2023
In a recent article in this journal, van Gerwen et al (2022 Mach. Learn.: Sci. Technol. 3 045005) presented a kernel ridge regression model to predict reaction barrier heights.
Kevin A Spiekermann   +3 more
doaj   +1 more source

A Novel Extraction Procedure of Contact Characteristic Parameters from Current–Voltage Curves in CdZnTe and CdTe Detectors

open access: yesSensors, 2023
The estimation of the characteristic parameters of the electrical contacts in CdZnTe and CdTe detectors is related to the identification of the main transport mechanisms dominating the currents.
Fabio Principato   +3 more
doaj   +1 more source

Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures

open access: yesJournal of Telecommunications and Information Technology, 2023
Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, y) barrier height values have been determined using the photoelectric measurement method.
Krzysztof Piskorski   +1 more
doaj   +1 more source

Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission [PDF]

open access: yes, 2004
We utilize bias-dependent internal photoemission spectroscopy to determine the metal/dielectric/silicon energy barrier profiles for Au/HfO2/Si and Au/Al2O3/Si structures. The results indicate that the applied voltage plays a large role in determining the
Atwater, Harry A.   +5 more
core   +1 more source

Understanding Density-Driven Errors for Reaction Barrier Heights

open access: yesJournal of Chemical Theory and Computation, 2023
Delocalization errors, such as charge-transfer and some self-interaction errors, plague computationally-efficient and otherwise-accurate density functional approximations (DFAs). Evaluating a semi-local DFA non-self-consistently on the Hartree-Fock (HF) density is often recommended as a computationally cheap remedy for delocalization errors.
Aaron D. Kaplan   +4 more
openaire   +3 more sources

Accurate barrier heights using diffusion Monte Carlo [PDF]

open access: yesThe Journal of Chemical Physics, 2017
Fixed node diffusion Monte Carlo (DMC) has been performed on a test set of forward and reverse barrier heights for 19 non-hydrogen-transfer reactions, and the nodal error has been assessed. The DMC results are robust to changes in the nodal surface, as assessed by using different mean-field techniques to generate single determinant wave functions ...
Kittithat Krongchon   +2 more
openaire   +3 more sources

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions [PDF]

open access: yesNanotechnology, 2015
Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed.
D. Tomer   +4 more
semanticscholar   +1 more source

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