Results 181 to 190 of about 145,393 (311)

Drift of Schottky Barrier Height in Phase Change Materials. [PDF]

ACS Nano
Nir-Harwood RG, Cohen G, Majumdar A, Haight R, Ber E, Gignac L, Ordan E, Shoham L, Keller Y, Kornblum L, Yalon E.   +10 more
europepmc   +1 more source

AI–Guided 4D Printing of Carnivorous Plants–Inspired Microneedles for Accelerated Wound Healing

Advanced Materials, EarlyView.
This work presents an artificial intelligence (AI)‐guided 4D‐printed microneedle platform inspired by carnivorous plants for wound healing. A thermo‐responsive shape memory polymer enables body temperature–triggered self‐coiling for autonomous wound closure.
Hyun Lee, Moon‐Jo Kim, DongEung Kim, Chan Ho Moon, Seojoon Bang, Hyeong Seok Kang, Ju Yeong Gwon, Jong Hwa Seo, Junhyub Jeon, Junhyuk Son, Munwon Lim, Minho Kang, Dong Yun Lee, Donghyun Lim, Jung‐Hoon Park, Gi Doo Cha, Soo‐Hong Lee, Tae‐Sik Jang, Kisuk Yang, Yunho Jeong, Youngho Eom, Hyun‐Do Jung   +21 more
wiley   +1 more source

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS₂/metal contacts. [PDF]

Sci Rep
Zhao X, Xia C, Li L, Wang A, Cao D, Zhang B, Fang Q.   +6 more
europepmc   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Dependence of the Metal-Insulator-Semiconductor Schottky Barrier Height on Insulator Composition. [PDF]

ACS Appl Electron Mater
Davis BE, Strandwitz NC.
europepmc   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS₂/MoS₂ heterojunction. [PDF]

Sci Rep
Polumati G, Kolli CSR, Kumar A, Salazar MF, De Luna Bugallo A, Sahatiya P.   +5 more
europepmc   +1 more source

Unveiling Exsolution‐Induced Giant Electronic and Magnetic Property Changes in Non‐Stoichiometric Titanate Perovskite Thin Films

Advanced Materials, EarlyView.
A giant insulator to metal transition and emergent superparamagnetism are revealed by nanoparticle exsolution in non‐stoichiometric titanate perovskite thin films. By combining transport, synchrotron spectroscopy, and first‐principles calculations, this work reveals how defect reconfiguration and lattice reconstruction fundamentally reshape electronic ...
Sungil Kim, June Ho Lee, Yaolong Xing, Dongchang Kim, Haeseong Jeong, Mongjun Jeong, Manuel Valvidares, Stuart S. P. Parkin, Sang Ho Oh, Donghwa Lee, Hyojin Yoon, Hyeon Han   +11 more
wiley   +1 more source

THE DETERMINATION OF BARRIER HEIGHT DURING VERTICAL TRANSPORT IN GaAs/AlXGa1-XAs QUANTUM WELL STRUCTURES

, 2008
In this work, how the changing of barrier height in GaAs/AlxGa1-xAs quantum well structures during vertical transport according to applied voltage, sample diameter and number of wells has been experimentally determined. The samples investigated here have
Algun, Gokhan
core  

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source