Results 81 to 90 of about 526,050 (249)

Enhancing Low‐Temperature Performance of Sodium‐Ion Batteries via Anion‐Solvent Interactions

open access: yesAdvanced Functional Materials, EarlyView.
DOL is introduced into electrolytes as a co‐solvent, increasing slat solubility, ion conductivity, and the de‐solvent process, and forming an anion‐rich solvent shell due to its high interaction with anion. With the above virtues, the batteries using this electrolyte exhibit excellent cycling stability at low temperatures. Abstract Sodium‐ion batteries
Cheng Zheng   +7 more
wiley   +1 more source

Sanksjoner, hybride trusler og skyggeflåten

open access: yesMagma
Sanksjoner er blitt et stadig viktigere virkemiddel i internasjonal politikk. Det har de siste årene vært en stor faglig diskusjon om effektene av sanksjoner. I denne artikkelen diskuterer vi hvordan sanksjoner rettet inn mot én type aktivitet eller ett
Ulf Sverdrup, Iva Parlov
doaj   +1 more source

Effective Catalytic Method of Diamantane Isomer Synthesis

open access: yesEurasian Chemico-Technological Journal, 2002
General principles of effect of the nature of metal-catalyst, carrier, solvent, method of preparation and temperature of catalyst reduction and other parameters (PH2, T, etc) on the process of hydrogenolysis of “binor-S” into pentacyclotetradecane have ...
K.S. Kulazhanov   +2 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

Simulation of Hydrogen Isotopes Accumulation Processes in Materials in the Presence of Chemical Traps

open access: yesEurasian Chemico-Technological Journal, 2019
 The accumulation of hydrogen inside a solids occurs in traps of a different nature. The following things are known in addition to finding hydrogen in interstitial sites: dislocation mechanisms of hydrogen storage, micropores and microcracks, sorption ...
T.V. Kulsartov   +3 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Risikofylt energihandel og EUs geopolitiske skifte

open access: yesMagma
Krigen i Ukraina er også en geopolitisk konflikt mellom vesten og Putins Russland. Da Russland annekterte Krim i 2014 skiftet forholdet mellom EU og Russland fra fred til sammensatt konflikt.
Nick Sitter, Svein Andersen
doaj   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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