Results 91 to 100 of about 2,863,776 (144)

A TSV-packaged SP6T RF MEMS switch with ultra-thin profile and suppressed substrate loss for DC to Ku band application. [PDF]

Microsyst Nanoeng
Zhang Y, Wei J, Liu H, Sun J, Wu Q, Li M, Liu Z.   +6 more
europepmc   +1 more source

Annual report / Integrated Circuits Incorporated. 1987

, 2013
Integrated Circuits Incorporated
core  

A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process. [PDF]

Micromachines (Basel)
Shen Y, Luo J, Zhao W, Dai JY, Cheng Q.
europepmc   +1 more source

Annual report / Integrated Circuits Incorporated. 1985

, 2013
Integrated Circuits Incorporated
core  

A 26-28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications. [PDF]

Sensors (Basel)
Ben Hammadi A, Doukkali MA, Descamps P, Niamien C.   +3 more
europepmc   +1 more source

A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]

Micromachines (Basel), 2023
He D, Yu Z, Chen J, Du K, Zhu Z, Cheng P, Tan C.   +6 more
europepmc   +1 more source

Annual report / Integrated Circuits Incorporated. 1984

, 2013
Integrated Circuits Incorporated
core  

Pushing the boundaries: an interview with Dae-Hyun Kim on terahertz devices. [PDF]

Natl Sci Rev
Wang D.
europepmc   +1 more source

Design and Realization of Ultra-Wideband Differential Amplifiers for M-Sequence Radar Applications. [PDF]

Sensors (Basel)
Sokol M, Galajda P, Jurik P.
europepmc   +1 more source

A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process. [PDF]

Micromachines (Basel)
Hu J, Wan J, Shen Y, Zhao W, Luo J.
europepmc   +1 more source