Low Frequency Noise Characterization and Modeling of HBTs developed in 55 nm BiCMOS technology for three collector architectures [PDF]
International audienceThe Si/SiGe:C HBTs are one of the best candidates that provides high frequency range integrated circuits. In order to increase ft and fmax, the device dimensions are reduced which has an impact on the low frequency noise level.
Hoffmann, Alain +5 more
core
A 365-410 GHz Push-Push Frequency Doubler with Driving Stage in SiGe BiCMOS [PDF]
205208With recent advancements in SiGe BiCMOS technologies, HBTs with transit frequencies of 300GHz or more can be provided for circuit design. One of these is Infineon's newest 90~nm BiCMOS technology, providing HBTs with an ft/f\max of 300GHz/500GHz ...
Aufinger, Klaus +4 more
core +1 more source
Noise characterization of SiGe HBTs up to 170 GHz [PDF]
This paper presents noise parameter measurements of SiGe HBTs in the 75-170 GHz range. The HBTs with a peak fT of 470 GHz and a peak fmax of 610 GHz were fabricated in a 130nm SiGe BiCMOS process.
Huynh, Dang Khoa +5 more
core +1 more source
A 700Mbps BiCMOS Read Channel Integrated Circuit
identifier:oai:t2r2.star.titech.ac.jp ...
openaire
A 17.8-20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers. [PDF]
Del Pino J +6 more
europepmc +1 more source
BiCMOS and BiFET integrated circuits engineers to meet at BCTM [PDF]
openaire +1 more source
A Compact and Power-Efficient Noise Generator for Stochastic Simulations. [PDF]
Zhao H, Sarpeshkar R, Mandal S.
europepmc +1 more source
A 90-100 GHz SiGe BiCMOS 6-Bit Digital Phase Shifter with a Coupler-Based 180° Unit for Phased Arrays. [PDF]
Shen H +7 more
europepmc +1 more source
Silicon-based optoelectronics: progress towards large scale optoelectronic integration and applications. [PDF]
Gao D, Zhou Z.
europepmc +1 more source
A 3.0-V, High-Precision, High-PSRR BGR with High-Order Compensation and Improved FVF Pre-Regulation. [PDF]
Shen Y +7 more
europepmc +1 more source

