Results 91 to 100 of about 1,077 (202)

Low Frequency Noise Characterization and Modeling of HBTs developed in 55 nm BiCMOS technology for three collector architectures [PDF]

open access: yes, 2019
International audienceThe Si/SiGe:C HBTs are one of the best candidates that provides high frequency range integrated circuits. In order to increase ft and fmax, the device dimensions are reduced which has an impact on the low frequency noise level.
Hoffmann, Alain   +5 more
core  

A 365-410 GHz Push-Push Frequency Doubler with Driving Stage in SiGe BiCMOS [PDF]

open access: yes
205208With recent advancements in SiGe BiCMOS technologies, HBTs with transit frequencies of 300GHz or more can be provided for circuit design. One of these is Infineon's newest 90~nm BiCMOS technology, providing HBTs with an ft/f\max of 300GHz/500GHz ...
Aufinger, Klaus   +4 more
core   +1 more source

Noise characterization of SiGe HBTs up to 170 GHz [PDF]

open access: yes
This paper presents noise parameter measurements of SiGe HBTs in the 75-170 GHz range. The HBTs with a peak fT of 470 GHz and a peak fmax of 610 GHz were fabricated in a 130nm SiGe BiCMOS process.
Huynh, Dang Khoa   +5 more
core   +1 more source

A 700Mbps BiCMOS Read Channel Integrated Circuit

open access: yesA 700Mbps BiCMOS Read Channel Integrated Circuit
identifier:oai:t2r2.star.titech.ac.jp ...
openaire  

A 17.8-20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers. [PDF]

open access: yesMicromachines (Basel), 2023
Del Pino J   +6 more
europepmc   +1 more source

BiCMOS and BiFET integrated circuits engineers to meet at BCTM [PDF]

open access: yesIEEE Solid-State Circuits Society Newsletter, 2001
openaire   +1 more source

A Compact and Power-Efficient Noise Generator for Stochastic Simulations. [PDF]

open access: yesIEEE Trans Circuits Syst I Regul Pap, 2023
Zhao H, Sarpeshkar R, Mandal S.
europepmc   +1 more source

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