Results 81 to 90 of about 5,679 (194)
A 64-point Fourier transform chip for high-speed wireless LAN application using OFDM
, 2004 In this article, we present a novel fixed-point 16-bit word-width 64-point FFT/IFFT processor developed primarily for the application in the OFDM based IEEE 802.11a Wireless LAN (WLAN) baseband processor.
Grass, Eckhard +2 more
core +1 more source
Digital BiCMOS Integrated Circuit Design [PDF]
, 1993 Sherif H. K. Embabi +2 more
openaire +1 more source
An x-band slow-wave T/R switch in 0.25-μm SiGe BiCMOS [PDF]
, 2013 Dinç, Tolga +2 more
core +1 more source
Integrated 2-D Optical Flow Sensor [PDF]
, 2004 I present a new focal-plane analog VLSI sensor that estimates optical flow in two visual dimensions. The chip significantly improves previous approaches both with respect to the applied model of optical flow estimation as well as the actual hardware ...
Stocker, Dr. Alan
core
A novel tuning technique for distributed voltage controlled oscillators [PDF]
, 2000 A novel current-steering delay-balanced tuning technique for distributed voltage controlled oscillators (DVCO) is demonstrated. This tuning technique is used to design a DVCO operating at 10 GHz in a 0.35 μm CMOS technology.
Hajimiri, Ali, Wu, Hui
core
A 17.8-20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers. [PDF]
Micromachines (Basel), 2023 Del Pino J +6 more
europepmc +1 more source
A 700Mbps BiCMOS Read Channel Integrated Circuit
A 700Mbps BiCMOS Read Channel Integrated Circuitidentifier:oai:t2r2.star.titech.ac.jp ...
openaire
A Compact and Power-Efficient Noise Generator for Stochastic Simulations. [PDF]
IEEE Trans Circuits Syst I Regul Pap, 2023 Zhao H, Sarpeshkar R, Mandal S.
europepmc +1 more source
Silicon-based optoelectronics: progress towards large scale optoelectronic integration and applications. [PDF]
Front Optoelectron, 2022 Gao D, Zhou Z.
europepmc +1 more source
SiGe BiCMOS front-end integrated circuits for X-band phased arrays
, 2020 Günümüzde X-Band faz dizinlerinin yüksek performans gereksinimi karşılamak için alıcı-verici (T/R) modülleri genellikle GaAS, InP temelli tektaş mikrodalga tümdevreler kullanılarak gerçeklenmektedir. Ancak III-V yarı iletken teknolojisine dayanan bu mödüllerin maliyeti, boyutu, ağırlığı, güç tüketimi ve karmaşıklığı faz dizini teknolojisinin ...
openaire +1 more source