2018 BiCMOS and COumpound Semiconductor INtegrated Circuits and Technology Sypmposium [PDF]
IEEE Electron Device Letters, 2018 +8 more sources
TESTING BiCMOS AND DYNAMIC CMOS LOGIC [PDF]
, 1995 In a normal integrated circuit (IC) production cycle, manufactured KS are tested to remove defective parts.The purpose of this research is to study the effects of real defects in BiCMOS and Dynamic CMOS circuits, and propose better test solutions to ...
Siyad Chih-hua Ma
core
BiCMOS Integrated Temperature Sensor for Thermal Evaluation of Fan-out Wafer-level Packaging (FOWLP) including Hot Spot Analysis [PDF]
, 2023 811A SiGe BiCMOS thermal chip for thermal package characterization is developed and demonstrated together with a chip-first, face-down FOWLP technology.
Braun, Tanja +6 more
core
CurvatureCompensated BiCMOS Bandgap with 1-V Supply Voltage [PDF]
, 2000 —In this paper, we present a bandgap circuit capable of generating a reference voltage of 0.54 V. The circuit, implemented in a submicron BiCMOS technology, operates with a supply voltage of 1 V, consuming 92 W at room temperature. In the bandgap circuit
M. Pruzzi +7 more
core +1 more source
SiC Bipolar Devices for High Power and Integrated Drivers [PDF]
, 2011 Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. The first SiC device to reach the market was the unipolar Schottky diode.
Lanni, Luigia +17 more
core +2 more sources
A 0.13 THz Amplifier Integrated with a frequency doubler for a 0.26 THz 0 dBm output power [PDF]
, 2019 \u3cp\u3eThis contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier integrated together with 1-stage frequency doubler.
Baltus, Peter; id_orcid +6 more
core +1 more source
Design of Integrated Current Reference Circuits for a 180-nanometer BICMOS Silicon Process [PDF]
, 2015 The goal of this thesis is to provide design analysis, simulation results, and physical layout structure for three current references that are to be physically fabricated in a 180- nanometer BICMOS silicon process.
Megee, Timothy Max
core +1 more source
High-frequency integrated circuits [PDF]
, 2013 A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits ...
Voinigescu, Sorin
core
Analysis and Implementation of Controlled Semiconductor Switch for Ultra-Wideband Radar Sensor Applications. [PDF]
Sensors (Basel), 2023 Jurik P +3 more
europepmc +1 more source
A Ku-Band SiGe:C Power Amplifier with 24.8 dBm Output Power and 35.6% Peak PAE [PDF]
115118This paper presents a wideband power amplifier for the Ku-Band. The architecture of the single PA cell is a fully differential topology. For full characterization of the differential topology and its benefits additional PAs with passive power ...
Aufinger, Klaus +3 more
core +1 more source