Results 61 to 70 of about 1,077 (202)
A 18‐36 GHz Noise Cancelling Low‐Noise Amplifier With 2.9 dB NF in 130 nm SiGe BiCMOS
Electronics Letters, Volume 61, Issue 1, January/December 2025.This paper presents a broadband noise‐canceling low‐noise amplifier (LNA) implemented in a 130‐nm SiGe BiCMOS process. The first stage employs a parallel architecture, combining a common‐base amplifier with a resistive feedback common‐emitter amplifier, to achieve noise cancellation.
Wenyan lyu +5 more
wiley +1 more source
A BiCMOS automatic gain control amplifier for SONET OC-3 [PDF]
, 2012 [[abstract]]This paper proposes a SONET OC-3 automatic gain control (AGC) amplifier implemented in double-poly-double-metal 1.0 μm BiCMOS technology. The amplifier contains variable gain amplifier, low pass filter and peak detector circuits. It yields an
Huang, C.-Y.;Lin, J.;Huang, P.-C.;Wang, C.-K.
core +1 more source
An Ultra‐Wideband Low Noise Colpitts VCO Using SiGe Bi‐CMOS Technology
The Journal of Engineering, Volume 2025, Issue 1, January/December 2025.This paper proposes a wideband voltage‐controlled oscillator (VCO) circuit based on the Colpitts oscillator structure. By employing amplifiers, frequency multipliers, and other techniques to process the output signal, an ultra‐wideband frequency tuning range can be achieved.
PeiYing Cai +4 more
wiley +1 more source
A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology [PDF]
, 2022 4 S.This work presents the design of a power amplifier (PA) with an AC-coupled common-emitter and common-base stage in a 130 nm SiGe BiCMOS technology.
Reiter, D. +8 more
core +1 more source
A K‐band eight‐element reconfigurable phased‐array receiver with high Tx‐band rejection
IET Microwaves, Antennas &Propagation, Volume 18, Issue 12, Page 869-877, December 2024.Abstract A K‐band eight‐element phased‐array receiver is proposed, featuring a reconfigurable beam count and high Tx‐band rejection, tailored for satellite communication applications. By precisely designing the inter‐stage and output matching networks of the four‐stage low‐noise amplifier, the Tx‐band rejection of the receiver can be effectively ...
Zhuoheng Xie +10 more
wiley +1 more source
Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors [PDF]
, 2008 The thermal behavior of various bipolar transistor categories, namely, trench-isolated (1) SOI BJTs, (2) BJTs fabricated on silicon substrates, and (3) SiGe HBTs, is thorougly analyzed.
Marano, Ilaria
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Active quasi circulator: Comprehensive review and performance comparison
Engineering Reports, Volume 6, Issue 6, June 2024.To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan +2 more
wiley +1 more source
Monolithic Millimeter-ware Frequency Multipliers [PDF]
, 2011 l'obbiettivo di questa tesi è la progettazione di moltiplicatori di frequenza monolitici in tecnologia INFINEON SiGe bipolare. I moltiplicatori progettati sono frequency octuplers basati su tre frequency doublers in cascata seguiti da un buffer d'uscita.
Fant, Tommaso
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A compact 60‐GHz on‐chip bandpass filter in GaAs technology
Electronics Letters, Volume 60, Issue 7, April 2024.A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu +3 more
wiley +1 more source
Compact modelling in RF CMOS technology [PDF]
, 2011 With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years.
Liu, Jun
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