Results 61 to 70 of about 2,863,776 (144)

Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors [PDF]

, 2008
The thermal behavior of various bipolar transistor categories, namely, trench-isolated (1) SOI BJTs, (2) BJTs fabricated on silicon substrates, and (3) SiGe HBTs, is thorougly analyzed.
Marano, Ilaria
core   +1 more source

Monolithic Millimeter-ware Frequency Multipliers [PDF]

, 2011
l'obbiettivo di questa tesi è la progettazione di moltiplicatori di frequenza monolitici in tecnologia INFINEON SiGe bipolare. I moltiplicatori progettati sono frequency octuplers basati su tre frequency doublers in cascata seguiti da un buffer d'uscita.
Fant, Tommaso
core  

Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology

We report on a 2:1 analog multiplexer (AMUX) circuit in 130-nm SiGe BiCMOS technology. The technology offers HBTs with peak fT of 470 GHz and fmax of 650 GHz.
Grözing, Markus, Berroth, Manfred, Choi, Junghan, Tannert, Tobias, Caspar, Christoph, Rücker, Holger, Schostak, Jonathan, Jungnickel, Volker, Freund, Ronald E., Schmidt, Christian   +9 more
core   +1 more source

High-Speed SiGe BiCMOS Technologies and Circuits

, 2017
This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances for different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well as the ...
A. Mai, R. Nagulapalli, A. Awny, A. Malignaggi, M. Kucharski, K. Schmalz, M. Eissa, H. J. Ng, P. Rito, M. Ko, M. Elkhouly, D. Kissinger, I. Garcia Lopez   +12 more
core   +1 more source

Analysis and Implementation of Controlled Semiconductor Switch for Ultra-Wideband Radar Sensor Applications. [PDF]

Sensors (Basel), 2023
Jurik P, Sokol M, Galajda P, Drutarovsky M.   +3 more
europepmc   +1 more source

System level performance and yield optimisation for analogue integrated circuits

, 2009
Advances in silicon technology over the last decade have led to increased integration of analogue and digital functional blocks onto the same single chip.
Md Ali, Sawal Hamid
core   +1 more source

A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS

233236This paper presents a WR2.2 push-push frequency doubler with two driving stages using Infineon's advanced 90nm SiGe BiCMOS technology, providing HBTs with an of 300 GHz/500 GHz, respectively.
Aufinger, Klaus, Yildirim, Muhammed Ali, Welling, Tobias Leander, Romstadt, Justin, Pohl, Nils, Vogelsang, Florian   +5 more
core   +1 more source

MEMS-based reconfigurable multi-band BiCMOS power amplifier

, 2006
This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network.
Dolle, ten, H.J., Lok, P., van Straten, F.E., A.J.M. De Graauw, C. Chanlo, H.K.J. ten Dolle, J. Dijkhuis, P.G. Steeneken, S. Pramm, Graauw, de, A.J.M., A. Van Bezooijen, Steeneken, P.G., Chanlo, C., Pramm, S., Bezooijen, van, A., F. Van Straten, P. Lok   +16 more
core   +1 more source

Compact modelling in RF CMOS technology [PDF]

, 2011
With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years.
Liu, Jun
core   +1 more source

A 17.8-20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers. [PDF]

Micromachines (Basel), 2023
Del Pino J, Khemchandani SL, San-Miguel-Montesdeoca M, Mateos-Angulo S, Mayor-Duarte D, Saiz-Perez JL, Galante-Sempere D.   +6 more
europepmc   +1 more source