Results 51 to 60 of about 2,863,776 (144)

RF-MEMS switch module in a 0.25 µm BiCMOS technology

open access: yes, 2022
S.25-28A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible ...
Wipf, C.   +20 more
core   +1 more source

An Ultra‐Wideband Low Noise Colpitts VCO Using SiGe Bi‐CMOS Technology

open access: yesThe Journal of Engineering, Volume 2025, Issue 1, January/December 2025.
This paper proposes a wideband voltage‐controlled oscillator (VCO) circuit based on the Colpitts oscillator structure. By employing amplifiers, frequency multipliers, and other techniques to process the output signal, an ultra‐wideband frequency tuning range can be achieved.
PeiYing Cai   +4 more
wiley   +1 more source

Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory

open access: yes, 2014
In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification.
Leenaerts, D.M.W.   +20 more
core   +1 more source

A K‐band eight‐element reconfigurable phased‐array receiver with high Tx‐band rejection

open access: yesIET Microwaves, Antennas &Propagation, Volume 18, Issue 12, Page 869-877, December 2024.
Abstract A K‐band eight‐element phased‐array receiver is proposed, featuring a reconfigurable beam count and high Tx‐band rejection, tailored for satellite communication applications. By precisely designing the inter‐stage and output matching networks of the four‐stage low‐noise amplifier, the Tx‐band rejection of the receiver can be effectively ...
Zhuoheng Xie   +10 more
wiley   +1 more source

Aluminum nitride for heatspreading in RF IC’s [PDF]

open access: yes, 2008
To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied.
Clement Lorenzo, Marta   +5 more
core   +1 more source

Active quasi circulator: Comprehensive review and performance comparison

open access: yesEngineering Reports, Volume 6, Issue 6, June 2024.
To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan   +2 more
wiley   +1 more source

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

open access: yesElectronics Letters, Volume 60, Issue 7, April 2024.
A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu   +3 more
wiley   +1 more source

Modulation Bandwidth Investigation of Voltage-Controlled Oscillators Under Periodic Linear Frequency Modulation

open access: yesIEEE Open Journal of Circuits and Systems
The modulation bandwidth of a voltage-controlled oscillator (VCO) is a key design metric that defines its ability to respond to fast tuning voltages and change its frequency accordingly. While prior works have addressed practical methods for measuring it,
Rabia Fatima Riaz   +2 more
doaj   +1 more source

Survey of Connectivity Restoration in 3D Wireless Ad Hoc/Sensor Networks

open access: yesInternational Journal of Distributed Sensor Networks, Volume 2024, Issue 1, 2024.
Wireless ad hoc/sensor networks (WASN) have seen increased application in three‐dimensional (3D) environments, such as underwater and aerial scenarios. However, WASN may be fragmented or unable to connect continuously due to the harsh surrounding environment or high mobility.
Hongsheng Chen   +5 more
wiley   +1 more source

87 dB SFDR in 0.18 μm BiCMOS Technology

open access: yes, 2021
This paper presents a 14b 2GS/s DAC in 0.18 μm BiCMOS. In order to improve the linearity and dynamic performance of the DAC, SiGe HBTs are adopted in this scheme as the DAC current sources, while the digital circuit is fabricated in CMOS technology for ...
Jian Xiao   +11 more
core   +1 more source

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