Results 51 to 60 of about 1,077 (202)
High Voltage, Volume 10, Issue 3, Page 533-545, June 2025.Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes.
Shiping Chen +6 more
wiley +1 more source
A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS [PDF]
233236This paper presents a WR2.2 push-push frequency doubler with two driving stages using Infineon's advanced 90nm SiGe BiCMOS technology, providing HBTs with an of 300 GHz/500 GHz, respectively.
Aufinger, Klaus +5 more
core +1 more source
Silicon Optoelectronic Integrated Circuits [PDF]
, 2004 The main subject of this book is circuit design of silicon optoelectronic integrated circuits (OEICs). The essential features of optical absorption are summarized, as is the device physics of photodetectors and their integration in modern bipolar, CMOS ...
Zimmermann, Horst
core +1 more source
International Journal of Circuit Theory and Applications, Volume 53, Issue 3, Page 1253-1291, March 2025.FIGURE 1. Comparison between the proposed method and prior state‐of‐the‐art: (a) TR vs. frequency; (b) FOMT vs. frequency. FIGURE 2. Comparison between the proposed method and prior art: (a) FOMTA vs. frequency; (b) TR vs. area. These designs showcase the versatility and efficiency of the two‐mode current‐starved delay architecture, which offers wide ...
Chaowei Yang +5 more
wiley +1 more source
BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies [PDF]
, 2015 This contribution presents the development of an integrated power combiner in Bi-CMOS technology employing artificial dielectric layers (ADLs) at submillimeter wave frequencies.
M. Alonso-delPino +14 more
core +1 more source
A Cascode Pair Based on SiGe HPT for RoF/LiFi Applications
Electronics Letters, Volume 61, Issue 1, January/December 2025.In this letter, a Si/SiGe phototransistor fully integrated in an industrial 55‐nm node BiCMOS technology is incorporated in a cascode pair for high‐speed photodetection. After having presented the phototranistor structure, the opto‐microwave performances are discussed and compared with a single stage phototransistor.
Thary Valentin +3 more
wiley +1 more source
A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process [PDF]
, 2008 This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to ...
A. van Roermund +5 more
core +1 more source
A Programmable Gain Amplifier With Temperature Compensation for Hall Sensor
Electronics Letters, Volume 61, Issue 1, January/December 2025.This work presents a high‐performance programmable gain amplifier (PGA) incorporating advanced temperature compensation technology. The proposed compensation scheme achieves remarkable thermal stability, maintaining sensitivity drift below 0.3% across an extended temperature range from −40°C to 140°C.
Kaixin Fan +5 more
wiley +1 more source
Low-power VLSI implementation of the inner receiver for OFDM-based WLAN systems [PDF]
, 2008 In this paper, we propose low-power designs for the synchronizer and channel estimator units of the Inner Receiver in wireless local area network systems.
Koushik Maharatna +11 more
core +1 more source
Energy-Efficient Aggressive Duty-Cycling of V-Band Power Amplifiers
IEEE AccessIn addition to implementing the core functionality, a design goal for modern circuits is reduced energy consumption. When options for improving active state efficiency are eventually exhausted, the next step is to aggressively minimize the duration a ...
Maximilian Gottfried Becker +3 more
doaj +1 more source