Results 31 to 40 of about 2,863,776 (144)

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109–1012 m–2.
Sh. D. Kurmashev, O. A. Kulinich, G. I. Brusenskaya, A. V. Verem’eva   +3 more
doaj   +1 more source

Simulation of Interference‐Enhanced Raman Amplification for Advanced Microelectronic Applications

physica status solidi (a), Volume 223, Issue 8, 22 April 2026.
This work presents an open‐source tool modeling interference‐enhanced Raman intensities in any multilayered structures. Depending on the stack and laser source, constructive interferences can be exploited to improve strain or composition measurement.
D. Monteil, Y. Mazel, F. Deprat, E. Prevost, R. Duru, D. Le Cunff, E. Nolot, V. H. Le, P. Quéméré, M. Mermoux   +9 more
wiley   +1 more source

A Linear High‐Efficiency Ka‐Band Doherty Power Amplifier Based on Gain Flattening Method Using Asymmetric Lossy Inductances

Electronics Letters, Volume 62, Issue 1, January/December 2026.
A Ka‐band Doherty power amplifier using asymmetric lossy inductors for gain flattening is presented. Fabricated in a 0.13‐µm SiGe BiCMOS process, the proposed DPA achieves a peak PAE of 30.11% and a 6‐dB back‐off efficiency of 20.6% at 28 GHz. The measured results demonstrate good linearity and efficiency performance for Ka‐band applications.
Xin Liu, Qian Zhai, Chen Long, Weile Tan, Yang Lu, Dehan Wang, Lin‐An Yang, Xiaohua Ma, Wenhua Chen   +8 more
wiley   +1 more source

Digital BiCMOS integrated circuit design

, 1993
Digital BiCMOS Integrated Circuit Design is the first book devoted entirely to the analysis and design of digital BiCMOS integrated circuits. BiCMOS Integrated Circuit Design also reviews CMOS and CML integrated circuit design.
Mohamed I. Elmasry, Embabi, Sherif H K, Bellaouar, Abdellatif, Abdellatif Bellaouar, Sherif H. K. Embabi, Embabi, Sherif H. K., Elmarsy, Mohamed I, Elmasry, Mohamed I.   +7 more
core   +1 more source

An integrated 3.1–5.1 GHz pulse generator for ultra-wideband wireless localization systems [PDF]

Advances in Radio Science, 2006
This paper presents an implementation of an integrated Ultra-wideband (UWB), Binary-Phase Shift Keying (BPSK) Gaussian modulated pulse generator. VCO, multiplier and passive Gaussian filter are the key components.
X. Fan, G. Fischer, B. Dietrich
doaj  

Compound‐Eye RF Vision for Next‐Generation Biomedical and Human‐Centred Radar Sensing

The Journal of Engineering, Volume 2026, Issue 1, January/December 2026.
This paper will first review recent biomedical radar‐enabled advancements at the human–microwave frontier, including physiological signal sensing, non‐contact human–computer interfaces, driving behaviour recognition, human tracking, and early‐stage clinical studies.
Victor G. Rizzi Varela, Changzhi Li
wiley   +1 more source

Design and Characterization of Wideband Dual-Polarized Double-Slot Lens Antenna With Low Cross-Polarization at Sub-THz in SiGe-BiCMOS

IEEE Open Journal of Antennas and Propagation
This work details the design and characterization of a wideband on-chip dual-polarized double-slot antenna for sub-THz frequencies, integrated in SiGe-BiCMOS technology.
Alexandros Bechrakis Triantafyllos, Maria Alonso-Delpino, Daniele Cavallo, Klaus Aufinger, Marco Spirito, Nuria Llombart   +5 more
doaj   +1 more source

Simulation and Analysis of Different Configurations of Demultiplexer Chips for Digital Electronics and Communications

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
Current digital communication systems need systems with high throughput, low latency, and hardware‐efficient structures that can scale with the growing complexity of data. Multiplexing and demultiplexing methods are crucial for meeting these requirements as they allow more than one data stream to be transmitted using the same channel.
Aruna Pant, Adesh Kumar, Varun Pratap Singh, Mohammad Rezwan Habib   +3 more
wiley   +1 more source

A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
This paper presents a high‐performance on‐chip diplexer designed for K/Ka‐band applications, fabricated via 130‐nm SiGe BiCMOS across two distinct frequency bands: 17–21 and 27–31 GHz. A localized backside etching (LBE) technique is employed to create air cavities beneath the inductors, a method that fundamentally mitigates substrate‐related losses and
Francesco Greco, Emilio Arnieri, Melih Gokdemir, Mohammed Alramadan, Giandomenico Amendola, Walter Ciccognani, Ernesto Limiti, Hussein Ezzeddine, Enrico Massoni, Luigi Boccia, Jin Xu   +10 more
wiley   +1 more source

A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology

, 2023
4952This work presents a static divide-by-16 in a 130-nm SiGe-BiCMOS technology, aiming to demonstrate the technologies' potential. A bias network followed by four divide-by-2 stages and an output buffer is designed. The DC power consumption of the first
Bredendiek, Christian, Schöpfel, Jan, Rücker, Holger, Pohl, Nils, Vogelsang, Florian   +4 more
core   +1 more source