Phase-Synchronizer based on gm-C All-Pass Filter Chain
The use of analog CMOS circuits at high frequency has gained much attention in the last several years. At the heart of rapid prototyping of these circuits is the concept of using a versatile library of common RF function blocks. The blocks (cells) must
JOVANOVIC, G. S. +3 more
doaj +1 more source
BiCMOS variable gain transimpedance amplifier for automotive applications [PDF]
A
Baekelandt, Bart +7 more
core +2 more sources
Silicon-based distributed voltage-controlled oscillators [PDF]
Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is ...
Hajimiri, Ali, Wu, Hui
core +1 more source
A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach [PDF]
A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming ...
Guan, Xiang +3 more
core +1 more source
Increasing the radiation resistance of single-crystal silicon epitaxial layers
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109–1012 m–2.
Sh. D. Kurmashev +3 more
doaj +1 more source
A low power 2 x 28 Gb/s electroabsorption modulator driver array with on-chip duobinary encoding [PDF]
An integrated 2 x 28 Gb/s dual-channel duobinary driver IC is presented. Each channel has integrated coding blocks, transforming a non-return-to-zero input signal into a 3-level electrical duobinary signal to achieve an optical duobinary modulation.
Bauwelinck, Johan +6 more
core +2 more sources
A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications
This paper presents a high‐performance on‐chip diplexer designed for K/Ka‐band applications, fabricated via 130‐nm SiGe BiCMOS across two distinct frequency bands: 17–21 and 27–31 GHz. A localized backside etching (LBE) technique is employed to create air cavities beneath the inductors, a method that fundamentally mitigates substrate‐related losses and
Francesco Greco +10 more
wiley +1 more source
Demonstration of a Graphene Adjustable‐Barriers Phototransistor with Tunable Ultra‐High Responsivity
A novel graphene‐based phototransistor with a tunable ultra‐high responsivity of 1.7 x 107 AW−1 has been demonstrated. Due to the selected material combination of amorphous silicon, graphene and n‐germanium, the device is potentially capable of dual‐band detection in the VIS‐IR range.
Carsten Strobel +5 more
wiley +1 more source
An integrated 3.1–5.1 GHz pulse generator for ultra-wideband wireless localization systems [PDF]
This paper presents an implementation of an integrated Ultra-wideband (UWB), Binary-Phase Shift Keying (BPSK) Gaussian modulated pulse generator. VCO, multiplier and passive Gaussian filter are the key components.
X. Fan, G. Fischer, B. Dietrich
doaj
A high-resolution burst-mode laser transmitter with fast and accurate level monitoring for 1.25 Gb/s upstream GPONs [PDF]
A
Bauwelinck, Johan +6 more
core +2 more sources

