Results 31 to 40 of about 1,077 (202)

Passive On-Chip Components for Fully Integrated Silicon RF VCOs

Active and Passive Electronic Components, 2002
In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations.
Aristides Kyranas, Yannis Papananos
doaj   +1 more source

A 270–330 GHz Vector Modulator Phase Shifter in 130nm SiGe BiCMOS [PDF]

, 2022
This paper presents a wideband vector modulator phase shifter measured at frequency bands reaching and ever surpassing the f t of the technology for 6G beamforming for extremely high data rate applications.
Rahkonen, Timo, Montaseri, Mohammad Hassan, Leinonen, Marko E., Jokinen, Markku, Pärssinen, Aarno, Singh, Sumit Pratap   +5 more
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On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

IEEE Journal of the Electron Devices Society, 2013
The performance potential and scaling characteristics of thin-base SOI symmetric lateral bipolar transistors were examined using 1-D analytic equations for the currents and capacitances.
Tak H. Ning, Jin Cai
doaj   +1 more source

Millimeter-Wave Phased Arrays in Silicon [PDF]

, 2007
Integration of mm-wave multiple-antenna systems on silicon-based processes enables complex, low-cost systems for high-frequency communication and sensing applications.
Natarajan, Arun Sridhar
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Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling

IEEE Access, 2020
Integrated noise sources (or hot loads) are essential to enable precise gain and noise figure Built-In Test Equipment (BITE) measurements. The present paper describes a millimeter-wave, solid-state noise source implemented in a standard, 130-nm Silicon ...
Federico Alimenti, Guendalina Simoncini, Gianluca Brozzetti, Daniele Dal Maistro, Marc Tiebout   +4 more
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Phase-Synchronizer based on gm-C All-Pass Filter Chain

Advances in Electrical and Computer Engineering, 2012
The use of analog CMOS circuits at high frequency has gained much attention in the last several years. At the heart of rapid prototyping of these circuits is the concept of using a versatile library of common RF function blocks. The blocks (cells) must
JOVANOVIC, G. S., MITIC, D. B., STOJCEV, M. K., ANTIC, D. S.   +3 more
doaj   +1 more source

Aluminum nitride for heatspreading in RF IC’s [PDF]

, 2008
To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied.
Clement Lorenzo, Marta, Schellevis, H., Olivares Roza, Jimena, Nanver, L.K., Iborra Grau, Enrique, La Spina, L.   +5 more
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Photonic-electronic ultra-broadband signal processing: Concepts, devices, and applications [PDF]

, 2022
3 S.Combining photonic integrated circuits (PIC) with millimeter-wave electronics opens novel perspectives in generation and detection of ultra-broadband signals with disruptive potential for a wide variety of applications. Here, we will give an overview
Harter, Tobias, Marin-Palomo, P., Zazzi, A., Muehlbrandt, Sascha, Tessmann, Axel, Gudyriev, S., Freude, Wolfgang, Koos, Christian, Scheytt, J.C., Kieninger, C., Randel, Sebastian, Witzens, J., Füllner, C., Walther, Martin, Schaefer, J., Müller, J., Zwick, Thomas, Ummethala, Sandeep, Zwickel, H.   +18 more
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MEMS-based reconfigurable multi-band BiCMOS power amplifier [PDF]

, 2006
This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network.
Dolle, ten, H.J., Lok, P., van Straten, F.E., A.J.M. De Graauw, C. Chanlo, H.K.J. ten Dolle, J. Dijkhuis, P.G. Steeneken, S. Pramm, Graauw, de, A.J.M., A. Van Bezooijen, Steeneken, P.G., Chanlo, C., Pramm, S., Bezooijen, van, A., F. Van Straten, P. Lok   +16 more
core   +1 more source

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109–1012 m–2.
Sh. D. Kurmashev, O. A. Kulinich, G. I. Brusenskaya, A. V. Verem’eva   +3 more
doaj   +1 more source