Results 21 to 30 of about 2,863,776 (144)
SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers
IEEE Access, 2023 Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change.
Jaco Du Preez +2 more
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Frontiers in Physics, 2021 We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier ...
Stavros Giannakopoulos +17 more
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0.13-mm SiGe BiCMOS technology with More-than-Moore modules
, 2022 S.62-65This paper presents three different technology modules, integrated into a 0.13-mm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications
Cetindogan, B. +10 more
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Integrated Circuit Signal Generation and Detection Techniques for Microwave and Sub-Millimeter Wave Signals [PDF]
, 2012 The unabated reduction of device feature sizes in semiconductor processes, particularly in complementary metal-oxide semiconductor (CMOS) processes, has served as the enabling factor behind integrated electronic systems of ever increasing complexity and ...
Bohn, Florian
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IEEE Access, 2020 Integrated noise sources (or hot loads) are essential to enable precise gain and noise figure Built-In Test Equipment (BITE) measurements. The present paper describes a millimeter-wave, solid-state noise source implemented in a standard, 130-nm Silicon ...
Federico Alimenti +4 more
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On signalling over through-silicon via (TSV) interconnects in 3-D integrated circuits. [PDF]
, 2010 This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the
Pamunuwa, Dinesh, +13 more
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Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology. [PDF]
, 2000 Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage.
Abdul Wahab, Mohd. Zahrin +7 more
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Maximum Effectiveness of Electrostatic Energy Harvesters When Coupled to Interface Circuits [PDF]
, 2012 Accepted ...
Green, TC, Mitcheson, PD
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An x-band slow-wave T/R switch in 0.25-μm SiGe BiCMOS [PDF]
, 2013 This brief presents a fully integrated X-band transmit/receive (T/R) switch using slow-wave transmission lines for X-band phased-array radar applications.
Kalyoncu, İlker +2 more
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Contribution to the design of continuous -time Sigma - Delta Modulators based on time delay elements [PDF]
, 2008 The research carried out in this thesis is focused in the development of a new class of data converters for digital radio. There are two main architectures for communication receivers which perform a digital demodulation.
Prefasi Sen, Enrique José
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