Results 21 to 30 of about 1,077 (202)
A reconfigurable dual‐band low noise amplifier for 5G in 65‐nm CMOS
Electronics Letters, Volume 59, Issue 11, June 2023., 2023 Adopting the method of designing reconfigurable matching networks, a reconfigurable dual‐band low noise amplifier (LNA) structure based on a 65‐nm CMOS process is proposed. The inter‐stage matching network and the output matching network are reconfigurable by using NMOS as switches, allowing the whole circuit to operate in dual bands of 5G. Abstract In
Jincai Wen, Meng Yu
wiley +1 more source
120‐GHz 2‐bit reflection‐type phase shifter based on PIN diodes switched‐lines
Electronics Letters, 2023 In this paper, a 2‐bit digital reflection‐type phase shifter (RTPS) working at 120 GHz is presented. It uses a compact coupled‐lines coupler with low insertion loss and high isolation over a wide bandwidth.
David Ouattara +6 more
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IEEE Open Journal of Circuits and Systems, 2021 This work presents a direct-conversion receiver for G-band applications formed by a cascaded single-stage distributed amplifier optimized for low noise, a single-balanced active mixer with inductive peaking and broadband RF matching, and a local ...
Paolo Valerio Testa +3 more
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A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range
Electronics Letters, Volume 59, Issue 9, May 2023., 2023 The conventional negative‐positive‐negative (NPN)‐based bandgap voltage reference (BGRs) cannot maintain a low‐temperature coefficient (TC) over an ultra‐wide temperature range due to the inherent reverse junction saturation current of the NPN bipolar junction transistors (BJT) in the high‐temperature range.
Weidong Xue +3 more
wiley +1 more source
Integrated Circuit Signal Generation and Detection Techniques for Microwave and Sub-Millimeter Wave Signals [PDF]
, 2012 The unabated reduction of device feature sizes in semiconductor processes, particularly in complementary metal-oxide semiconductor (CMOS) processes, has served as the enabling factor behind integrated electronic systems of ever increasing complexity and ...
Bohn, Florian
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Sensors, 2019 This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research.
Mladen Božanić, Saurabh Sinha
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Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory [PDF]
, 2014 In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification.
Leenaerts, D.M.W. +20 more
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Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
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Maximum Effectiveness of Electrostatic Energy Harvesters When Coupled to Interface Circuits [PDF]
, 2012 Accepted ...
Green, TC, Mitcheson, PD
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A highly flexible ROM generator for BiCMOS technology [PDF]
, 2022 S.33-36This paper describes a highly flexible design rule independent ROM generator for BiCMOS technology with full CAD support for compilation, verification, simulation, and documentation.
Eßer, W. +3 more
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