Results 21 to 30 of about 5,679 (194)
IEEE Open Journal of Circuits and Systems, 2021 This work presents a direct-conversion receiver for G-band applications formed by a cascaded single-stage distributed amplifier optimized for low noise, a single-balanced active mixer with inductive peaking and broadband RF matching, and a local ...
Paolo Valerio Testa +3 more
doaj +1 more source
CMOS optical-sensor array with high output current levels and automatic signal-range centring [PDF]
, 1994 A CMOS compatible photosensor with high output current levels, and an area-efficient scheme for automatic signal-range centring according to illumination conditions are presented.
Carmona Galán, Ricardo +3 more
core +1 more source
Sensors, 2019 This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research.
Mladen Božanić, Saurabh Sinha
doaj +1 more source
Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
doaj +1 more source
Design of a 4.2-5.4 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology [PDF]
, 2006 In this paper, a 4.2-5.4 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35´m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs).
Bozkurt, Ayhan +7 more
core +1 more source
A Breakdown Voltage Multiplier for High Voltage Swing Drivers [PDF]
, 2007 A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response.
Hajimiri, Ali, Mandegaran, Sam
core +1 more source
Passive On-Chip Components for Fully Integrated Silicon RF VCOs
Active and Passive Electronic Components, 2002 In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations.
Aristides Kyranas, Yannis Papananos
doaj +1 more source
On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI
IEEE Journal of the Electron Devices Society, 2013 The performance potential and scaling characteristics of thin-base SOI symmetric lateral bipolar transistors were examined using 1-D analytic equations for the currents and capacitances.
Tak H. Ning, Jin Cai
doaj +1 more source
IEEE Access, 2020 Integrated noise sources (or hot loads) are essential to enable precise gain and noise figure Built-In Test Equipment (BITE) measurements. The present paper describes a millimeter-wave, solid-state noise source implemented in a standard, 130-nm Silicon ...
Federico Alimenti +4 more
doaj +1 more source
A Spectral-Scanning Nuclear Magnetic Resonance Imaging (MRI) Transceiver [PDF]
, 2009 An integrated spectral-scanning nuclear magnetic resonance imaging (MRI) transceiver is implemented in a 0.12 mum SiGe BiCMOS process. The MRI transmitter and receiver circuitry is designed specifically for small-scale surface MRI diagnostics ...
Babakhani, Aydin +2 more
core +1 more source