Results 11 to 20 of about 5,679 (194)

120‐GHz 2‐bit reflection‐type phase shifter based on PIN diodes switched‐lines

Electronics Letters, 2023
In this paper, a 2‐bit digital reflection‐type phase shifter (RTPS) working at 120 GHz is presented. It uses a compact coupled‐lines coupler with low insertion loss and high isolation over a wide bandwidth.
David Ouattara, Cédric Durand, Sylvain Bourdel, Frédéric Paillardet, Loic Vincent, Jordan Corsi, Philippe Ferrari   +6 more
doaj   +2 more sources

280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate

IET Microwaves, Antennas & Propagation
In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips
Haiyan Lu, Jixin Chen, Pinpin Yan, Si‐Yuan Tang, Yu Zheng, Sidou Zheng, Wei Cheng, Yan Sun, Peigen Zhou, Long Chang, Longzhu Cai, Zhi Hao Jiang, Hongqi Tao, Tangsheng Chen, Wei Hong   +14 more
doaj   +2 more sources

Integrated superregenerative amplifier based 24 GHz frequency modulated continuous wave radar active reflector tags for joint ranging and communication

IET Radar, Sonar &Navigation, Volume 17, Issue 8, Page 1196-1212, August 2023., 2023
This work reports concepts for two cooperative active reflector tags (ARTs) for joint ranging and communication in a linear frequency modulated continuous wave secondary radar system along with corresponding theoretical derivations. The two low power, sensor enabled ARTs feature roll invariance and are based on 24 GHz integrated superregenerative ...
Manu Viswambharan Thayyil, Adrian Figueroa, Niko Joram, Frank Ellinger   +3 more
wiley   +1 more source

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Photonics, 2018
In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
doaj   +1 more source

Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems [PDF]

, 2009
In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together
Bakkaloglu, Ahmet Kemal, Bakkaloğlu, Ahmet Kemal, Ergintav, Arzu, Gurbuz, Yasar, Gürbüz, Yaşar, Ozeren, Emre, Tekin, İbrahim, Tekin, Ibrahim, Özeren, Emre   +8 more
core   +1 more source

A reconfigurable dual‐band low noise amplifier for 5G in 65‐nm CMOS

Electronics Letters, Volume 59, Issue 11, June 2023., 2023
Adopting the method of designing reconfigurable matching networks, a reconfigurable dual‐band low noise amplifier (LNA) structure based on a 65‐nm CMOS process is proposed. The inter‐stage matching network and the output matching network are reconfigurable by using NMOS as switches, allowing the whole circuit to operate in dual bands of 5G. Abstract In
Jincai Wen, Meng Yu
wiley   +1 more source

Characterization of an embedded RF-MEMS switch [PDF]

, 2010
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25μm BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin ...
Ehwald, K. E., Gurbuz, Yasar, Gürbüz, Yaşar, Kaynak, Mehmet, Korndorfer, F., Korndörfer, F., Scholz , Rene, Sun, Y. M., Tillack, B., Wipf, C., Zihir, Samet   +10 more
core   +1 more source

A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range

Electronics Letters, Volume 59, Issue 9, May 2023., 2023
The conventional negative‐positive‐negative (NPN)‐based bandgap voltage reference (BGRs) cannot maintain a low‐temperature coefficient (TC) over an ultra‐wide temperature range due to the inherent reverse junction saturation current of the NPN bipolar junction transistors (BJT) in the high‐temperature range.
Weidong Xue, Yiseng Zhang, Jian Fang, Junyan Ren   +3 more
wiley   +1 more source

Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications [PDF]

, 2007
In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs ...
Bozkurt, Ayhan, Esame, İbrahim Onur, Gürbüz, Yaşar, Tekin, İbrahim   +3 more
core   +1 more source

Implementation of a second‐order frequency selective surface filter at mmWave using paper and silver ink

The Journal of Engineering, Volume 2023, Issue 4, April 2023., 2023
In this work, fabrication of frequency selective surface filters by coating paper with silver ink and subsequent laser etching the frequency filter pattern has been investigated. Three filter structures consisting of a combination of square and ring patches operating at 102, 113, and 126 GHz and with corresponding signal attenuation of −15.2, −15.4 ...
Mikko Kokkonen, Rakshita Dessai, Sami Myllymäki   +2 more
wiley   +1 more source