Results 11 to 20 of about 1,077 (202)

280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate

IET Microwaves, Antennas & Propagation
In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips
Haiyan Lu, Jixin Chen, Pinpin Yan, Si‐Yuan Tang, Yu Zheng, Sidou Zheng, Wei Cheng, Yan Sun, Peigen Zhou, Long Chang, Longzhu Cai, Zhi Hao Jiang, Hongqi Tao, Tangsheng Chen, Wei Hong   +14 more
doaj   +2 more sources

Digital BiCMOS Integrated Circuit Design [PDF]

, 1993
Digital BiCMOS Integrated Circuit Design is the first book devoted entirely to the analysis and design of digital BiCMOS integrated circuits. BiCMOS Integrated Circuit Design also reviews CMOS and CML integrated circuit design.
Sherif H. K. Embabi, Abdellatif Bellaouar, Mohamed I. Elmasry   +2 more
openaire   +3 more sources

0.13-mm SiGe BiCMOS technology with More-than-Moore modules [PDF]

, 2022
S.62-65This paper presents three different technology modules, integrated into a 0.13-mm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications
Cetindogan, B., Wipf, C., Wöhrmann, M., Wipf, S.T., Kaynak, C.B., Kaynak, M., Braun, T., Wietstruck, M., Inac, M., Göritz, A., Voges, S.   +10 more
core   +1 more source

A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology [PDF]

, 2023
4952This work presents a static divide-by-16 in a 130-nm SiGe-BiCMOS technology, aiming to demonstrate the technologies' potential. A bias network followed by four divide-by-2 stages and an output buffer is designed. The DC power consumption of the first
Bredendiek, Christian, Schöpfel, Jan, Rücker, Holger, Pohl, Nils, Vogelsang, Florian   +4 more
core   +1 more source

RF-MEMS switch module in a 0.25 µm BiCMOS technology [PDF]

, 2022
S.25-28A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible ...
Wipf, C., Purtova, T., Kaynak, M., Zoschke, K., Drews, J., Elkhouly, M., Zhang, W., Wilke, M., Ehrmann, O., Schulz, K., Kaletta, K., Schumacher, H., Suchodoletz, M.V., Liu, G., Tillack, B., Wietstruck, M., Knoll, D., Ulusoy, A.C., Korndörfer, F., Mühlhaus, V., Scholz, R.   +20 more
core   +1 more source

Integrated 220-260 GHz Radar Frontend [PDF]

, 2022
S.235-238Subject of this paper is an integrated transceiver frontend MMIC that was designed for millimeter-wave wideband radar systems operating at a center frequency of 240 GHz. The MMIC was implemented using a 35 nm InAIAs/InGaAs based metamorphic HEMT
Kuri, Michael, Leuther, Arnulf, Merkle, Thomas, Wagner, Sandrine, Tessmann, Axel, Massler, Hermann   +5 more
core   +1 more source

87 dB SFDR in 0.18 μm BiCMOS Technology [PDF]

, 2021
This paper presents a 14b 2GS/s DAC in 0.18 μm BiCMOS. In order to improve the linearity and dynamic performance of the DAC, SiGe HBTs are adopted in this scheme as the DAC current sources, while the digital circuit is fabricated in CMOS technology for ...
Jian Xiao, Hongfei Hu, Gao, Hao, Yufeng Guo, Hao Gao, Yi Zhang, Zhang, Yi, Qian Qi, Guo, Yufeng, Hu, Hongfei, Qi, Qian, Xiao, Jian   +11 more
core   +1 more source

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Photonics, 2018
In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
doaj   +1 more source

A SiGe D-Band x12 Frequency Multiplier with Gilbert Cell-Based Tripler [PDF]

, 2023
195198The design and measurement results of a fully-integrated x12 frequency multiplier for D-Band applications in Infineon's 0.13 μm SiGe BiCMOS technology B11HFC are presented.
Aufinger, Klaus, Papurcu, Hakan, Romstadt, Justin, Zaben, Ahmad, Pohl, Nils   +4 more
core   +1 more source

Integrated superregenerative amplifier based 24 GHz frequency modulated continuous wave radar active reflector tags for joint ranging and communication

IET Radar, Sonar &Navigation, Volume 17, Issue 8, Page 1196-1212, August 2023., 2023
This work reports concepts for two cooperative active reflector tags (ARTs) for joint ranging and communication in a linear frequency modulated continuous wave secondary radar system along with corresponding theoretical derivations. The two low power, sensor enabled ARTs feature roll invariance and are based on 24 GHz integrated superregenerative ...
Manu Viswambharan Thayyil, Adrian Figueroa, Niko Joram, Frank Ellinger   +3 more
wiley   +1 more source