Results 11 to 20 of about 222 (111)
Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits
Photonics, 2018 In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
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CAD Modeling of mm-Wave Circuits Incorporating Avalanche Noise Diodes
IEEE Access, 2022 This paper proposes, for the first time, a completely stand alone avalanche diode model based on a C++ code. The code, implemented within the Advanced Design Systems (ADS) environment, describes the diode behavior in terms of impedance and ...
Guendalina Simoncini +2 more
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Sensors, 2019 This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research.
Mladen Božanić, Saurabh Sinha
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120‐GHz 2‐bit reflection‐type phase shifter based on PIN diodes switched‐lines
Electronics Letters, 2023 In this paper, a 2‐bit digital reflection‐type phase shifter (RTPS) working at 120 GHz is presented. It uses a compact coupled‐lines coupler with low insertion loss and high isolation over a wide bandwidth.
David Ouattara +6 more
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IEEE Open Journal of Circuits and Systems, 2021 This work presents a direct-conversion receiver for G-band applications formed by a cascaded single-stage distributed amplifier optimized for low noise, a single-balanced active mixer with inductive peaking and broadband RF matching, and a local ...
Paolo Valerio Testa +3 more
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Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
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Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad
Sensors, 2020 According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between ...
Changyeop Lee +4 more
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Passive On-Chip Components for Fully Integrated Silicon RF VCOs
Active and Passive Electronic Components, 2002 In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations.
Aristides Kyranas, Yannis Papananos
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On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI
IEEE Journal of the Electron Devices Society, 2013 The performance potential and scaling characteristics of thin-base SOI symmetric lateral bipolar transistors were examined using 1-D analytic equations for the currents and capacitances.
Tak H. Ning, Jin Cai
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Phase-Synchronizer based on gm-C All-Pass Filter Chain
Advances in Electrical and Computer Engineering, 2012 The use of analog CMOS circuits at high frequency has gained much attention in the last several years. At the heart of rapid prototyping of these circuits is the concept of using a versatile library of common RF function blocks. The blocks (cells) must
JOVANOVIC, G. S. +3 more
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