Simulation of Interference‐Enhanced Raman Amplification for Advanced Microelectronic Applications
physica status solidi (a), Volume 223, Issue 8, 22 April 2026.This work presents an open‐source tool modeling interference‐enhanced Raman intensities in any multilayered structures. Depending on the stack and laser source, constructive interferences can be exploited to improve strain or composition measurement.
D. Monteil +9 more
wiley +1 more source
Compound‐Eye RF Vision for Next‐Generation Biomedical and Human‐Centred Radar Sensing
The Journal of Engineering, Volume 2026, Issue 1, January/December 2026.This paper will first review recent biomedical radar‐enabled advancements at the human–microwave frontier, including physiological signal sensing, non‐contact human–computer interfaces, driving behaviour recognition, human tracking, and early‐stage clinical studies.
Victor G. Rizzi Varela, Changzhi Li
wiley +1 more source
Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology [PDF]
We report on a 2:1 analog multiplexer (AMUX) circuit in 130-nm SiGe BiCMOS technology. The technology offers HBTs with peak fT of 470 GHz and fmax of 650 GHz.
Grözing, Markus +9 more
core +1 more source
A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology [PDF]
, 2021 This letter describes an ultra-broadband power amplifier (PA) in a 130 nm SiGe:C BiCMOS technology. To achieve this broadband while keeping a compact chip size, an on-chip transformer-based dual-LC-tank power matching method is proposed and implemented ...
Gao, Hao +5 more
core +1 more source
An integrated 3.1–5.1 GHz pulse generator for ultra-wideband wireless localization systems [PDF]
Advances in Radio Science, 2006 This paper presents an implementation of an integrated Ultra-wideband (UWB), Binary-Phase Shift Keying (BPSK) Gaussian modulated pulse generator. VCO, multiplier and passive Gaussian filter are the key components.
X. Fan, G. Fischer, B. Dietrich
doaj
A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.This paper presents a high‐performance on‐chip diplexer designed for K/Ka‐band applications, fabricated via 130‐nm SiGe BiCMOS across two distinct frequency bands: 17–21 and 27–31 GHz. A localized backside etching (LBE) technique is employed to create air cavities beneath the inductors, a method that fundamentally mitigates substrate‐related losses and
Francesco Greco +10 more
wiley +1 more source
Contribution to the design of continuous -time Sigma - Delta Modulators based on time delay elements [PDF]
, 2008 The research carried out in this thesis is focused in the development of a new class of data converters for digital radio. There are two main architectures for communication receivers which perform a digital demodulation.
Prefasi Sen, Enrique José +1 more
core
36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms [PDF]
, 2020 We demonstrate a clear eye-diagram at 36 Gb/s of a BiCMOS driver directly wire-bonded to an InP electro-absorption modulator (EAM) both fabricated through foundry platforms.
Mekhazni, Karim +11 more
core +1 more source
An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range [PDF]
, 2022 This paper presents a monolithically integrated E-band amplifier multiplier chain (AMC) developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of a 25 GHz 1:1 power divider, two 25 GHz driver amplifiers (DA 1,2 ), a 75 GHz passive frequency
Yu, Jiayang +6 more
core +1 more source
Demonstration of a Graphene Adjustable‐Barriers Phototransistor with Tunable Ultra‐High Responsivity
Advanced Optical Materials, Volume 13, Issue 18, June 26, 2025.A novel graphene‐based phototransistor with a tunable ultra‐high responsivity of 1.7 x 107 AW−1 has been demonstrated. Due to the selected material combination of amorphous silicon, graphene and n‐germanium, the device is potentially capable of dual‐band detection in the VIS‐IR range.
Carsten Strobel +5 more
wiley +1 more source