Results 171 to 180 of about 785,590 (233)

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

open access: yesAdvanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal   +3 more
wiley   +1 more source

5 Years of bipolar disorder conversations on Reddit: Methods, key topics and future directions. [PDF]

open access: yesPLoS One
Poh C   +6 more
europepmc   +1 more source

Morphotropic Phase Boundary in Graft Poly(Vinylidene Fluoride‐co‐Tetrafluoroethylene) With High Curie Temperature

open access: yesAdvanced Science, EarlyView.
The first TrFE‐free ferroelectric polymers exhibiting concurrently a morphotropic phase boundary and high Curie temperature are reported through a grafting strategy, which is completely different from previous methods to design MPB by composition and irradiation. This finding offers a cost‐effective solution to decode the long‐standing inverse relation
Zekai Fei   +6 more
wiley   +1 more source

Retina‐Inspired Bi‐Based Terahertz Photonic Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Combined with effective band alignment and substrate engineering, bismuth materials are introduced to form terahertz photonic bio‐inspired devices with picosecond short‐term plasticity to enable multi‐scene visual perception. Thus obtained hardware through the terahertz optical neural network (THz‐ONN) demonstrates high recognition accuracy, providing ...
Pujing Zhang   +14 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár   +12 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta   +9 more
wiley   +1 more source

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