Results 91 to 100 of about 87,187 (276)

Light‐Driven Reconfigurable Logic in a Monolithic Perovskite Device via Nonlinear Photoresponse Switching

open access: yesAdvanced Materials, EarlyView.
This study demonstrates a monolithic perovskite OELG device that performs all eight logic operations, including XOR and XNOR, without external bias. Enabled by trap‐engineered MAPbI3:PLL and dual photogates, it achieves reconfigurable logic and parallel decoding of amplitude–frequency signals, supporting scenario‐configured logic‐level separation for ...
Dante Ahn   +13 more
wiley   +1 more source

Development of nine-channel 10-micrometer (Hg, Cd)Te pushbroom IR/CCD system [PDF]

open access: yes
The engineering development of the 9-channel detector array is documented. The development of the array demonstrates the feasibility of a self scanned multi-element infrared detector focal plane.
Wasa, S., White, W. J.
core   +1 more source

Designing analog circuits in CMOS [PDF]

open access: yes, 2004
The evolution in CMOS technology dictated by Moore's Law is clearly beneficial for designers of digital circuits, but it presents difficult challenges, such as lowered nominal supply voltages, for their peers in the analog world who want to keep pace ...
Annema, Anne-Johan   +3 more
core   +1 more source

Peptide‐Induced Ferroelectricity in Charge‐Transfer Supramolecular Materials

open access: yesAdvanced Materials, EarlyView.
Bio‐inspired supramolecular charge‐transfer amphiphiles self‐assemble into nanoribbons in water, where peptide chirality‐induced symmetry breaking generates robust ferroelectricity across multiple systems. These water‐processable organic ferroelectrics also enhance neuronal outgrowth and electrophysiological maturity, offering a versatile strategy for ...
James V. Passarelli   +15 more
wiley   +1 more source

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

open access: yesIEEE Journal of the Electron Devices Society, 2019
Four-terminal poly-Si thin-film transistors (TFTs), with a counter-doped body terminal connected to the floating channel, can suppress both dc and dynamic hot-carrier (HC) degradation of TFTs.
Ting Gao   +3 more
doaj   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

open access: yesAdvanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

open access: yes, 2010
We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully
A. Abuelgasim   +9 more
core   +1 more source

From Thin Films to Nanodots: Bottom‐Up Integration of Fe3O4 on Nb:STO for Functional Oxide Nanostructures

open access: yesAdvanced Materials, EarlyView.
Scalable bottom‐up fabrication of Fe3O4 nanodots on Nb:SrTiO3 using anodic alumina templates enables long‐range ordered arrays with diameters down to 30 nm. STEM highlights the epitaxial growth of Fe3O4 films on Nb:SrTiO3. Complementary polarized neutron reflectometry (PNR) and X‐ray magnetic circular dichroism (XMCD) measurements on continuous films ...
Yifan Xu   +14 more
wiley   +1 more source

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

open access: yesIEEE Journal of the Electron Devices Society
Degradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS).
Dongsheng Hong   +4 more
doaj   +1 more source

An Integrated Stainless Steel‐Based Electrode for Durable Direct Natural Seawater Electrolysis

open access: yesAdvanced Materials, EarlyView.
We report an integrated stainless steel‐based electrode featuring Pt atomic clusters anchored on a NiFe‐LDH anticorrosive layer. By regulating interfacial water dynamics to suppress chloride attack, this hierarchical architecture achieves superior durability (over 1000 h) and energy efficiency in direct seawater electrolysis, offering a cost‐effective ...
Jiankun Li   +10 more
wiley   +1 more source

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