Results 101 to 110 of about 27,208 (258)

Sub‐Terahertz Memristor Switches Using MoS2 by Liquid–Liquid Interface Assembly

open access: yesAdvanced Science, EarlyView.
This work introduces application‐ready sub‐terahertz memristor switches fabricated from electrochemically exfoliated MoS2 nanosheets assembled at a liquid–liquid interface. The devices exhibit robust unipolar resistive switching, low insertion loss, and high isolation across 10–110 GHz.
Tomás Mingates   +15 more
wiley   +1 more source

Reconfigurable Selector‐Only Memory (SOM) for Scalable Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
ABSTRACT Highly scalable reconfigurable neuromorphic devices are critical for addressing continual‐learning challenges in artificial intelligence. However, the scalability of existing reconfigurable devices is severely constrained by limited operating margins and insufficient process maturity.
Jin‐Yu Wen   +7 more
wiley   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

open access: yesAdvanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu   +11 more
wiley   +1 more source

From Cytoskeletal Remodeling to Oocyte Quality: The Emerging Role of Mechanics

open access: yesAdvanced Science, EarlyView.
Mechanical properties of the oocyte are increasingly recognized as critical determinants of meiotic success and developmental potential. How actomyosin remodeling controls oocyte mechanics, how these properties are altered in pathological conditions, and how they could serve as markers in reproductive medicine are examined.
Anastasia Shihabi   +3 more
wiley   +1 more source

The Diverse Behaviours of Discharged Degradation at Varied Interfaces of Silicone Gel/Ceramic Substrates Under High‐Frequency Square Wave Voltage

open access: yesHigh Voltage
Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at ...
Chuang Zhang   +7 more
doaj   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende   +4 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao   +15 more
wiley   +1 more source

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

open access: yesAdvanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina   +10 more
wiley   +1 more source

Illuminating the Intracellular World: Breakthroughs in Nanoscale Optoelectronics

open access: yesAdvanced Electronic Materials, EarlyView.
This perspective explores optoelectronic biointerfaces spanning macroscale flexible devices to nanoscale intracellular systems, emphasizing their integration across dimensions. It examines capacitive, Faradaic, and photothermal mechanisms that enable light‐driven control of cellular activity and highlights key material and design challenges in ...
Tania Assaf, Menahem Y. Rotenberg
wiley   +1 more source

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