Results 91 to 100 of about 27,330 (257)

Stabilized Cubic GeTe With Matched Grain‐Boundary Networks and Band Convergence for High‐Performance Dual‐Mode Thermoelectric Devices

Advanced Science, EarlyView.
I‐doping stabilizes the cubic phase of GeTe and generates “electron‐transparent, phonon‐blocking” grain boundary networks while inducing valence‐band convergence. This synergistic structural‐electronic design enables effective electron‐phonon decoupling, achieving an exceptional average zTave of ∼1.62, a peak zT of ∼2.2, and enhanced mechanical ...
Xiaobo Tan, Xuri Rao, Huangshui Ma, Jiaxing Luo, Fan Feng, Zijian Lin, Ruiheng Li, Maoji Tian, Siqi Huo, Min Hong, Ran Ang   +10 more
wiley   +1 more source

TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices [PDF]

ISPS'21 Proceedings, 2021
A. Lachichi, P. Mawby
openaire   +1 more source

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

Advanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park, Jaewoo Choi, Gigon Nam, Junsu Yu, Donghyun Ryu, Jung‐Kyu Lee, Sungjoon Kim, Sungjun Kim   +7 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

How to Simulate Bipolar Degradation by UV Irradiation with High Accuracy

Solid State Phenomena
The reliability issue of the bipolar degradation in 4H-SiC devices has not been completely eliminated. We have been proposing a screening method for latent defects causing this reliability issue utilizing UV irradiation, which we call the E-V-C (Expansion-Visualization-Contraction) method.
Yasuyuki Igarashi, Kazumi Takano, Yohsuke Matsushita, Takuya Morita   +3 more
openaire   +1 more source

Green and Scalable Synthesis of Efficient and Stable CsPbBr3 Perovskite Quantum Dots Enables Low‐Threshold Amplified Spontaneous Emission

Advanced Science, EarlyView.
Green and scalable synthesis of CsPbBr3 perovskite quantum dots using bio‐sourced lecithin and hexane enables single‐batch production over 10 grams. Suppressed Auger recombination and electron‐phonon coupling yields 95% PLQY, enhanced stability, and low ASE thresholds of 230.4 (ns) and 50.1 (fs) µJ cm−2 in neat films. ABSTRACT Halide perovskite quantum
Yongfeng Liu, Mengting Zhang, Qingyu Xie, Kehao Hu, Bowen Zhang, Zhe Zhang, Jie Yang, Zhiping Hu, Juan Du, Jia Wang, Min Zhou   +10 more
wiley   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source