Results 141 to 150 of about 87,187 (276)

Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective [PDF]

Masashi Kato, Shunta Harada, Hitoshi Sakane   +2 more
openalex   +1 more source

Deformation Driven Suction Cups: A Mechanics‐Based Approach to Wearable Electronics

Advanced Science, EarlyView.
Deformation‐driven suction cups enable robust, reversible adhesion of wearable electronics to human skin spanning wide mechanical compliance, without adhesives or tight straps. By integrating mechanics modeling, experiments, and contact mechanics theory, this work reveals how cup geometry, substrate compliance, and interfacial adhesion govern suction ...
Seola Lee, Andrew Akerson, Roham Pardakhtim, Ehsan Hajiesmaili, Kevin Rhodes, Zidong Li, Andrew Stanley, Amirhossein Amini, Daniele Piazza, Chiara Daraio, Tianshu Liu   +10 more
wiley   +1 more source

Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation

Applied Physics Express
Bipolar degradation is a critical problem in Silicon carbide devices, caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations.
Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato   +3 more
doaj   +1 more source

Influence of material quality and process-induced defects on semiconductor device performance and yield [PDF]

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated.
Mckee, W. R., Porter, W. A.
core   +1 more source

Enhanced Bandgap Flexibility in Perovskite‐Silicon Tandem Solar Cells via Three‐Terminal Architecture

Advanced Science, EarlyView.
Three‐terminal (3T) perovskite/silicon tandem solar cells overcome the current‐matching constraints of 2T designs. Using an IBC POLO silicon bottom cell, we demonstrate a 30.1% PCE, with performance largely decoupled from perovskite bandgap and enhanced resilience under realistic, time‐dependent solar spectra.
Mohammad Gholipoor, Michael Rienaecker, Xuzheng Liu, Seyedamir Orooji, Lingyi Fang, Paul Fassl, Renjun Guo, Uli Lemmer, Robby Peibst, Ulrich Wilhelm Paetzold   +9 more
wiley   +1 more source

Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods

, 2018
Xiaolong Li, Lu Wu, Xin Wang, Qi Guo, Chengfa He, Sun Jing, Yu Xin, Mohan Liu, Jia Jincheng, Shuai Yao, Wei Xin-Yu   +10 more
openalex   +1 more source

Thermoelectric Property Mapping for High‐Performance Integrated MgAgSb‐MgCuSb System

Advanced Science, EarlyView.
From the property mapping of the MgAgSb–MgCuSb system, both thermoelectric materials and corresponding interface materials are optimized: Ag‐rich compositions provide higher PF and zT, whereas Cu‐rich side yields superior transport properties and low contact resistance.
Jiankang Li, Airan Li, Longquan Wang, Xinzhi Wu, Raju Chetty, Takao Mori   +5 more
wiley   +1 more source

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors

, 2022
Taras Ravsher, A. Fantini, Adrian Chasin, Shamin Houshmand Sharifi, Hubert Hody, Harold Dekkers, T. Witters, Jan Van Houdt, Valeri Afanas’ev, Sébastien Couet, Gouri Sankar Kar   +10 more
openalex   +2 more sources

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Quasi‐Antipolar Nanoclusters Driven Superior Energy Storage in High‐Entropy Relaxor Ferroelectrics

Advanced Science, EarlyView.
Quasi‐antipolar nanoclusters are engineered in lead‐free NaNbO3‐based high‐entropy relaxors that weaken polar nanoregion coupling and induce distinct ferroelectric transition under high fields to enable desirable polarization response. This breakthrough system achieves ultrahigh recoverable‐energy‐density (≈18.3 J cm−3), efficiency (≈91.5%), and ...
Ao Tian, Zehao Li, Qingkang Jiang, Xiang Wu, Xuewen Jiang, Xin Gao, Xiaokuo Er, Mohamed Mahmoud, Maqbool Ur Rehman, Liqiang Liu, Aiwen Xie, Tengfei Hu, Ruzhong Zuo   +12 more
wiley   +1 more source