Results 41 to 50 of about 87,187 (276)

Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor

IEEE Access, 2020
Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online
Xiangxiang Liu, Lingling Li, Diganta Das, Ijaz Haider Naqvi, Michael G. Pecht   +4 more
doaj   +1 more source

Optimisation of the Read-out Electronics of Muon Drift-Tube Chambers for Very High Background Rates at HL-LHC and Future Colliders

, 2016
In the ATLAS Muon Spectrometer, Monitored Drift Tube (MDT) chambers and sMDT chambers with half of the tube diameter of the MDTs are used for precision muon track reconstruction.
Abovyan, Sergey, Ecker, Katharina, Fink, David, Fras, Markus, Gadow, Philipp, Kortner, Oliver, Kroha, Hubert, Mueller, Felix, Nowak, Sebastian, Richter, Robert, Schmid, Clemens, Schmidt-Sommerfeld, Korbinian, Zhao, Yazhou   +12 more
core   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Scientific Reports, 2022
SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage ...
Shunta Harada, Toshiki Mii, Hitoshi Sakane, Masashi Kato   +3 more
doaj   +1 more source

Performance Degradation Modeling and Its Prediction Algorithm of an IGBT Gate Oxide Layer Based on a CNN-LSTM Network

Micromachines, 2023
The problem of health status prediction of insulated-gate bipolar transistors (IGBTs) has gained significant attention in the field of health management of power electronic equipment. The performance degradation of the IGBT gate oxide layer is one of the
Xin Wang, Zhenwei Zhou, Shilie He, Junbin Liu, Wei Cui   +4 more
doaj   +1 more source

Meiotic nuclear divisions in budding yeast require PP2ACdc55-mediated antagonism of Net1 phosphorylation by Cdk [PDF]

, 2011
During meiosis, one round of deoxyribonucleic acid replication is followed by two rounds of nuclear division. In Saccharomyces cerevisiae, activation of the Cdc14 early anaphase release (FEAR) network is required for exit from meiosis I but does not lead
Arumugam, Prakash, Kerr, Gary W., Millar, Jonathan B. A., Petronczki, Mark, Sarkar, Sourav, Tibbles, Katherine L.   +5 more
core   +3 more sources

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Damage Effect of Single and Sequential Neutron/γ Irradiation on Bipolar Device

Yuanzineng kexue jishu
Bipolar transistors are widely used in electronic circuits and serve as core components in various devices. In the complex radiation environments, electronic circuits are exposed to more than one type of radiation particle.
XING Jiabin1, WANG Kai2, CAO Fei1, YANG Jianqun2, QIN Jianqiang1
doaj   +1 more source

Performance Degradation Based Lifetime Evaluation of Power Electronic Devices

Zhongguo dianli, 2020
Current lifetime evaluation methods are often ineffective for power electronic devices which have high reliability, long life, and multi-fault mode competition.
Guangze PAN, Zheng ZHANG, Qin LUO, Xiaobing LI, Linghui MENG   +4 more
doaj   +1 more source

Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation [PDF]

Nuclear Technology and Radiation Protection, 2014
Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation.
OO Myo Min, Rashid Nahrul Khair Bin Alang Md, Karim Julia Bin Abdul, Mohamed Zin Muhammad Rawi Bin, Rahim Rosminazuin Bt.Ab., Azman Amelia Wong, Hasbullah Nurul Fadzlin   +6 more
doaj   +1 more source