Results 61 to 70 of about 87,187 (276)

Effect on signal-to-noise ratio of splitting the continuous contacts of cuff electrodes into smaller recording areas. [PDF]

, 2013
BackgroundCuff electrodes have been widely used chronically in different clinical applications. This neural interface has been dominantly used for nerve stimulation while interfering noise is the major issue when employed for recording purposes ...
Brånemark, Rickard, Delbeke, Jean, Håkansson, Bo, Marin-Millan, Jorge, Ortiz-Catalan, Max   +4 more
core   +2 more sources

Toward Scalable Solutions for Silver‐Based Gas Diffusion Electrode Fabrication for the Electrochemical Conversion of CO2 – A Perspective

Advanced Functional Materials, EarlyView.
In this study, the preparation techniques for silver‐based gas diffusion electrodes used for the electrochemical reduction of carbon dioxide (eCO2R) are systematically reviewed and compared with respect to their scalability. In addition, physics‐based and data‐driven modeling approaches are discussed, and a perspective is given on how modeling can aid ...
Simon Emken, K. Ashoke Raman, Alexander Bauer, Violeta Karyofylli, Eva Jodat, André Karl, Rüdiger‐A. Eichel   +6 more
wiley   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Advanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter, Valerio Piazza, Pramod Ghimire, Anna Fontcuberta i Morral, Eli Sutter   +4 more
wiley   +1 more source

GA-LSTM-Based Degradation Prediction for IGBTs in Power Electronic Systems

Energies
The reliability and lifetime of insulated gate bipolar transistors (IGBTs) are critical to ensuring the stability and safety of power electronic systems.
Yunfeng Qiu, Zehong Li, Shan Tian
doaj   +1 more source

Design of a constant fraction discriminator for the VFAT3 front-end ASIC of the CMS GEM detector [PDF]

, 2016
In this work the design of a constant fraction discriminator (CFD) to be used in the VFAT3 chip for the read-out of the triple-GEM detectors of the CMS experiment, is described.
Abbaneo, D., Abbas, M., Abbrescia, M., Abdelalim, A. A., Aboamer, O., Acosta, D., Ahmad, A., Ahmed, W., Ahmed, W., Akl, M. Abi, Aleksandrov, A., Altieri, P., Aly, R., Asawatangtrakuldee, C., Aspell, P., Assran, Y., Awan, I., Bally, S., Ban, Y., Banerjee, S., Baranac, A. Puig, Barashko, V., Barria, P., Bencze, G., Beni, N., Benussi, L., Bhopatkar, V., Bianco, S., Bos, J., Bouhali, O., Braghieri, A., Braibant, S., Buontempo, S., Calabria, C., Caponero, M., Caputo, C., Cassese, F., Castaneda, A., Cauwenbergh, S., Cavallo, F. R., Celik, A., Choi, M., Choi, S., Christiansen, J., Cimmino, A., Colafranceschi, S., Colaleo, A., Czellar, S., Dabrowski, M. M., De Robertis, G., Dildick, S., Dorney, B., Elmetenawee, W., Endroczi, G., Errico, F., Fenyvesi, A., Ferry, S., Furic, I., Garcia, A. Conde, Giacomelli, P., Gilmore, J., Golovtsov, V., Guiducci, L., Guilloux, F., Gutierrez, A., Hadjiiska, R. M., Hassan, A., Hauser, J., Hoepfner, K., Hohlmann, M., Hoorani, H., Iaydjiev, P., Jeng, Y. G., Kamon, T., Karchin, P., Kim, H., Korytov, A., Krutelyov, S., Kumar, A., Lee, J., Lentdecker, G. De, Lenzi, T., Litov, L., Loddo, F, Madorsky, A., Maerschalk, T., Maggi, M., Magnani, A., Majumdar, N., Mal, P. K., Mandal, K., Marchioro, A., Marinov, A., Masod, R., Merlin, J. A., Mitselmakher, G., Mohamed, S., Mohanty, A. K., Mohapatra, A., Molnar, J., Muhammad, S., Mukhopadhyay, S., Naimuddin, M., Nuzzo, S., Oliveira, R. De, Oliveri, E., Pant, L. M., Paolucci, P., Park, I., Passeggio, G., Pavlov, B., Philipps, B., Piccolo, D., Postema, H., Radi, A., Radogna, R., Raffone, G., Ranieri, A., Rashevski, G., Riccardi, C., Rodozov, M., Rodrigues, A., Ropelewski, L., Roychowdhury, S., Ryu, G., Ryu, M. S., Safonov, A., Salva, S., Saviano, Giovanna, Shah, A. H., Sharma, A., Sharma, A., Sharma, R., Shopova, M., Stenis, M. Van, Sturdy, J., Sultanov, G., Swain, S. K., Szillasi, Z., Talvitie, J., Tamma, C., Tatarinov, A., Tuuva, T., Tytgat, M., Vai, I., Venditti, R., Verhagen, E., Verwilligen, P., Vitulo, P., Volkov, S., Vorobyev, A., Wang, D., Wang, M., Yang, U., Yang, Y., Yonamine, R., Zaganidis, N., Zenoni, F., Zhang, A.   +158 more
core   +2 more sources

Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?

Advanced Functional Materials, EarlyView.
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy, Richard Ganser, Dong‐Gyu Kim, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Thomas Mikolajick, Susan Trolier‐McKinstry, Alfred Kersch, Uwe Schroeder   +9 more
wiley   +1 more source

Junction Parameter Extraction for Electronic Device Characterization

Active and Passive Electronic Components, 2004
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters.
S. Dib, C. Salame, N. Toufik, A. Khoury, F. Pélanchon, P. Mialhe   +5 more
doaj   +1 more source

Reliability Analysis and Design of MMC Based on Mission Profile for the Components Degradation

IEEE Access, 2020
In the field of high voltage level applications, modular multi-level converter (MMC) has the definite advantages of low power loss and modularity and there have been many studies on its reliability.
Gaotai Lv, Wanjun Lei, Meng Wang, Chunlin Lv, Jiaqi Zhao   +4 more
doaj   +1 more source

Low Voltage Floating Gate MOS Transistor Based Four-Quadrant Multiplier [PDF]

, 2014
This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al.
Gupta, M., Singh, U., Srivastava, R.
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source