Results 91 to 100 of about 39,927 (260)
Silicon device performance measurements to support temperature range enhancement [PDF]
Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast
Askew, Ray +5 more
core +1 more source
GaAs-based optoelectronic neurons [PDF]
, 1993 An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented.
Kim, Jae H. +2 more
core +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
Advanced Electronic Materials, EarlyView.This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Fabrication and high temperature characteristics of ion-implanted GaAs bipolar transistors and ring-oscillators [PDF]
Ion implantation techniques that permit the reproducible fabrication of bipolar GaAs integrated circuits are studied. A 15 stage ring oscillator and discrete transistor were characterized between 25 and 400 C. The current gain of the transistor was found
Doerbeck, F. H. +2 more
core +1 more source
Low Voltage Floating Gate MOS Transistor Based Four-Quadrant Multiplier [PDF]
, 2014 This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al.
Gupta, M., Singh, U., Srivastava, R.
core +1 more source
Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe
Advanced Electronic Materials, EarlyView.Room‐temperature sliding ferroelectricity in γ‐InSe enables a two‐dimensional FeFET with a 6.8 V memory window, above 104 conductance modulation, longer than 10‐years retention and above 103 cycles fatigue resistance. An ultrathin (4.8 nm) γ‐InSe ferroelectric tunnel junction exhibits reversible high/low resistance switching with TER of 105 at room ...
Yue Li +7 more
wiley +1 more source
Electronic Physician, 2014 Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices.
Rozita Farhadi, Bita Farhadi
doaj +1 more source
Flexible Memory: Progress, Challenges, and Opportunities
Advanced Intelligent Discovery, EarlyView.Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
Development of GaAs and GaAs/1-x/P/x/ thin-film bipolar transistors Final report [PDF]
Development of GaAs and GaAs/1-xPx thin film bipolar ...
Dean, R. H., Nuese, C. J.
core +1 more source