Results 191 to 200 of about 39,927 (260)

Reducing Avalanche Build-Up Time by Integrating a Single-Photon Avalanche Diode with a BiCMOS Gating Circuit. [PDF]

Sensors (Basel)
Goll B, Saadi Nejad M, Schneider-Hornstein K, Zimmermann H.   +3 more
europepmc   +1 more source

Neuromorphic Visual Receptive Field Hardware with Vertically Integrated Indium-Gallium-Zinc-Oxide Optoelectronic Memristors over Silicon Neuron Transistors. [PDF]

Adv Mater
Kim HW, Kim JH, Shin DH, Jung MC, Park TW, Park HJ, Han JK, Hwang CS.   +7 more
europepmc   +1 more source

Polarity control of 2D semiconductor for reconfigurable electronics. [PDF]

Microsyst Nanoeng
He X, Guan K, Sun F, Gou X, Liu L, Wang Y, Zhou W, Xia Y, Zhang C, Dai H, Zhao Z, Wang X, Zhang T.   +12 more
europepmc   +1 more source

Radiation design handbook for the Jupiter probe [PDF]

Hart, A. R., Price, M. L., Raymond, J. P., Vanlint, V. A. J.   +3 more
core   +1 more source

OpenPore: A low-cost, portable, battery-powered exponential decay pulse generator for electroporation. [PDF]

HardwareX
Nesmith T, Gupta GD, Rackus DG.
europepmc   +1 more source

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Optically Pumped Bipolar Transistor

Russian Microelectronics, 2023
The properties of a bipolar npn transistor were studied when exposed to unmodulated incoherent radiation created by a “white” LED. The static and dynamic characteristics of the transistor were measured at various exposure intensities. It is shown that the change in the characteristics of the transistor under optical influence is due to an increase in ...
Yu. K. Altudov, D. S. Gaev, A. V. Pskhu, S. Sh. Rekhviashvili   +3 more
openaire   +1 more source

Bipolar Junction Transistors

1993
The first germanium alloy bipolar junction transistor (BJT) was invented by Bardeen, Brattain, and Shockley in 1948. The bipolar junction transistor is considered to be one of the most important electronic components used in integrated circuits (ICs) for computers, communications and power systems, and in many other digital and analog electronic ...
openaire   +1 more source

Heterojunction Bipolar Transistors

2004
Heterojunction Bipolar Transistors (HBTs) are an advanced development of the Bipolar Junction Transistors (BJTs). The basic principles of operation of bipolar transistors are explained in detail elsewhere, e.g. in [305, 496, 570].
Vassil Palankovski, Rüdiger Quay
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Bipolar Junction Transistor

2020
The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H.
Stephan J. G. Gift, Brent Maundy
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Bipolar Junction Transistors

2020
The bipolar junction transistor, or BJT, is a three-lead device made by stacking three layers of doped semiconductor material with alternating p- and n-doping. Hence, there are NPN or PNP type transistors. While the details of the electronic behavior of these transistors differs from that seen for the FET, the general approach for circuit analysis ...
openaire   +1 more source