Results 201 to 210 of about 39,927 (260)
Some of the next articles are maybe not open access.
Heterostructure Bipolar Transistors
1993Heterojunctions make it possible to obtain a qualitative improvement in the operating speed of bipolar transistors.
openaire +1 more source
2000
Abstract In Chapter 12 the p-n junction and the metal-semiconductor junction were discussed. These devices are two-terminal devices which are useful as rectifiers, but cannot be used as amplifiers because they contain no mechanism for modulating the electric current in such a way as to produce gain.
M Balkanski, R F Wallis
openaire +1 more source
Abstract In Chapter 12 the p-n junction and the metal-semiconductor junction were discussed. These devices are two-terminal devices which are useful as rectifiers, but cannot be used as amplifiers because they contain no mechanism for modulating the electric current in such a way as to produce gain.
M Balkanski, R F Wallis
openaire +1 more source
1994
ALTHOUGH in principle consisting merely of two p-n junction diodes back to back, in practice the bipolar junction transistor (BJT) is a completely different class of device; whereas the diode is a passive device, the transistor is active — it can be used to amplify voltages (signals).
openaire +1 more source
ALTHOUGH in principle consisting merely of two p-n junction diodes back to back, in practice the bipolar junction transistor (BJT) is a completely different class of device; whereas the diode is a passive device, the transistor is active — it can be used to amplify voltages (signals).
openaire +1 more source
1980
Bipolar transistors are npn or pnp structures where the current flow across the base region is by minority carriers injected from an emitter region. This minority carrier flow is collected at a reverse-biased collector junction. The energy diagram for an npn transistor without bias is given in Fig. 4.1(a). With forward bias on the emitter-base junction,
openaire +1 more source
Bipolar transistors are npn or pnp structures where the current flow across the base region is by minority carriers injected from an emitter region. This minority carrier flow is collected at a reverse-biased collector junction. The energy diagram for an npn transistor without bias is given in Fig. 4.1(a). With forward bias on the emitter-base junction,
openaire +1 more source
InsulatedGate Bipolar Transistor
2010This chapter contains sections titled: History Structure Characteristics Applications This chapter contains sections titled ...
openaire +1 more source
An organic electrochemical transistor for multi-modal sensing, memory and processing
Nature Electronics, 2023, , Tao Li
exaly
Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor
Nature Nanotechnology, 2022Luhing Hu, Anh Tuan Hoang, Jong-Hyun Ahn
exaly