Results 31 to 40 of about 39,927 (260)
Bipolar Charge Plasma Transistor: A Novel Three Terminal Device
, 2012 A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter ...
Kumar, M. Jagadesh, Nadda, Kanika
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Hardening electronic devices against very high total dose radiation environments [PDF]
, 1972 The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Buchanan, B. +3 more
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Hybrid power semiconductor [PDF]
, 1985 The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit.
Chen, D. Y.
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A power sharing series power BJT array with isolated low voltage control for AC power control applications [PDF]
, 2006 A technique for a continuously variable AC resistance using a series BJT array is presented. This array provides high power dissipation capability and uniform voltage and power distribution across the individual transistors. The array, controlled using a
Cho, Paul, Kularatna, Nihal
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Advanced Functional Materials, EarlyView.Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
Semiconductor Switch: Key Components and Future Developments in Power Electronics [PDF]
MATEC Web of ConferencesThe rapid development of modern industry has led to the expansion of the demand for high-end devices in a wider range of fields. Semiconductor switches have also become a popular research area as key components in electronic engineering. It also plays an
Ji Mengdie, Zhu Guli
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Voltage regulator for battery power source [PDF]
, 1979 A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage.
Black, J. M.
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Concurrent multiband low-noise amplifiers -- theory, design, and applications [PDF]
, 2002 The concept of concurrent multiband low-noise-amplifiers (LNAs) is introduced. A systematic way to design concurrent multiband integrated LNAs in general is developed.
Hajimiri, Ali, Hashemi, Hossein
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Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
A Novel Shielded IGBT (SIGBT) With Integrated Diodes
IEEE Journal of the Electron Devices Society, 2020 A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen +3 more
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