Results 41 to 50 of about 39,927 (260)
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon +6 more
wiley +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Comparison of conventional and cascode drive of SiC BJTs
This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant ...
Neville McNeill +3 more
doaj +1 more source
Alat Ukur Karakteristik Kurva Bipolar Junction Transistor Berbasis Personal Computer [PDF]
Transistor adalah salah satu komponen elektronika yang mempunyai karakteristik dan spesifikasi yang berbeda-beda sehingga pengaplikasiannya disesuaikan dengan kebutuhan dalam perancangan.
Handoko, H. (Handoko) +2 more
core
Smart Catheters for Diagnosis, Monitoring, and Therapy
This study presents a comprehensive review of smart catheters, an emerging class of medical devices that integrate embedded sensors, robotics, and communication systems, offering increased functionality and complexity to enable real‐time health monitoring, diagnostics, and treatment. Abstract This review explores smart catheters as an emerging class of
Azra Yaprak Tarman +12 more
wiley +1 more source
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source
High Temperature Simulation of 4H-SiC Bipolar Circuits
High speed and high-temperature operation capabilities are desirable features of integrated circuits. Due to their innate electrical and physical properties, silicon devices face significant hurdles at elevated temperatures, while silicon carbide devices
Hazem Elgabra, Shakti Singh
doaj +1 more source
Real‐Time 3D Ultrasound Imaging with an Ultra‐Sparse, Low Power Architecture
This article presents a novel, ultra‐sparse ultrasound architecture that paves the way for wearable real‐time 3D imaging. By integrating a unique convolutional array with chirped data acquisition, the system achieves high‐resolution volumetric scans at a fraction of the power and hardware complexity.
Colin Marcus +9 more
wiley +1 more source
Perancangan, Fabrikasi, dan Karakterisasi Transistor Bipolar
Transistor bipolar masih memegang peranan penting dan tidak tergantikan dalam aplikasi sistem elektronik meskipun hampir semua rangkaian logika baik itu mikroprosesor atau memori terdiri atas transistor MOS (Metal Oxide Semiconductor).
Ayub Subandi, Irman Idris
doaj +1 more source
Are spin junction transistors suitable for signal processing? [PDF]
A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing functionality. Here, we
M. Cahay +3 more
core +3 more sources

