Results 71 to 80 of about 39,927 (260)
Voltage to frequency converter Patent [PDF]
, 1971 Voltage controlled, variable frequency relaxation oscillator with MOSFET variable current ...
Lokerson, D. C.
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Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors
Advanced Science, EarlyView.The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan +11 more
wiley +1 more source
Simulation of a Novel Bipolar-FET Type-S, Negative Resistance Circuit
Active and Passive Electronic Components, 2003 A new circuit which uses FET and bipolar transistor is given. It exhibits Type-S differential negative resistance and a theoretical explanation is appended along with PSPICE simulation.
Umesh Kumar
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Advanced Science, EarlyView.2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal +3 more
wiley +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the bipolar static induction transistor (BSIT) making process flow improvement and its device-process simulation are presented. The process flow improvement have allowed to reduce number of metal intermediate subject copies (MISC) applied ...
N. L. Lagunovich +2 more
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Generation of short electrical pulses based on bipolar transistorsny [PDF]
Advances in Radio Science, 2004 A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented.
M. Gerding, T. Musch, B. Schiek
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Вестник Дагестанского государственного технического университета: Технические науки, 2016 In this article the opportunity to form a pn-junction bipolar transistor as a light-emitting, which will increase the degree of integration of large scale integrated circuits by reducing heat gain.
T. A. Ismailov +4 more
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Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
Advanced Electronic Materials, EarlyView.This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
Bipolar thermoelectric superconducting single-electron transistor
Physical Review ResearchThermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar thermoelectric effect ...
Sebastiano Battisti +4 more
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AIP Advances, 2017 A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory.
R. Aluguri +3 more
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