Results 151 to 160 of about 8,395 (219)
Numerical analysis of flow configuration and channel design for thermoelectric OTEC systems. [PDF]
Wu CI, Tseng WL, Wang BX.
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Advances in 2D Photodetectors: Materials, Mechanisms, and Applications. [PDF]
Odebowale AA +6 more
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Progress and opportunities in bismuth-based materials for X-ray detection. [PDF]
Ghosh J +6 more
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Design and Validation of a High-Speed Miniaturized Thermocycler with Peltier Elements for Efficient PCR Thermal Cycling. [PDF]
Bamerni P +4 more
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Ultrahigh Permittivity of Surface-State-Dominated Bi<sub>2</sub>Te<sub>3</sub> Nanosheets for Low-Frequency Microwave Absorption. [PDF]
Li D +10 more
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Cooler, stronger, smaller: improving thermoelectric cooling. [PDF]
Chauhan NS, Mori T.
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2021
Bismuth telluride (Bi2Te3) is the most mature thermoelectric material that has been well commercialized for electronic cooling and has gradually been used for power generation using low- and medium-temperature waste heat. In the last decade, extensive efforts have been devoted to its performance enhancement, which attracts interests from both academia ...
Pan, Y., Li, J.
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Bismuth telluride (Bi2Te3) is the most mature thermoelectric material that has been well commercialized for electronic cooling and has gradually been used for power generation using low- and medium-temperature waste heat. In the last decade, extensive efforts have been devoted to its performance enhancement, which attracts interests from both academia ...
Pan, Y., Li, J.
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Journal of Applied Physics, 1987
By optimizing the growth conditions and doping with Bi, we have produced epitaxial layers of SnTe with hole concentration as low as 2.6×1018 cm−3. This is more than an order of magnitude less than the smallest carrier concentration reported for undoped bulk crystals (even with heat treatment to reduce the metal vacancy concentration). The hole mobility
M. A. Tamor +4 more
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By optimizing the growth conditions and doping with Bi, we have produced epitaxial layers of SnTe with hole concentration as low as 2.6×1018 cm−3. This is more than an order of magnitude less than the smallest carrier concentration reported for undoped bulk crystals (even with heat treatment to reduce the metal vacancy concentration). The hole mobility
M. A. Tamor +4 more
openaire +1 more source
Thermal expansion of bismuth telluride
High Temperature, 2011The results of X-ray and dilatometric measurements of the thermal expansion of bismuth telluride in the temperature range of 4.2–850 K have been critically analyzed. The joint statistical processing of the experimental data has been performed by the least squares method and the most reliable temperature dependences of the linear thermal expansion ...
L. M. Pavlova +2 more
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2017
BiTe modules are the pioneers of thermoelectric (TE) modules that are available on the market and being sold annually in large quantities. BiTe modules have the unique advantage of being most efficient for applications within the temperature regime where the hot side can reach a maximum temperature of up to 250 °C.
Pham Hoang Ngan, Nini Pryds, Li Han
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BiTe modules are the pioneers of thermoelectric (TE) modules that are available on the market and being sold annually in large quantities. BiTe modules have the unique advantage of being most efficient for applications within the temperature regime where the hot side can reach a maximum temperature of up to 250 °C.
Pham Hoang Ngan, Nini Pryds, Li Han
openaire +1 more source

