Results 141 to 150 of about 76,710 (243)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

METHOD FOR PRODUCING IMPROVED BLACK SILICON ON A SILICON SUBSTRATE

open access: yes, 2018
Brevet concernant la fabrication et la passivation d'une microstructure antireflet, appelée "black silicon".
Poncelet, Olivier   +3 more
openaire   +1 more source

Mass Spectrometric Investigation of the Influence of Water Vapour and Oxygen on Gas‐Phase Reactions of Aluminium Acetylacetonate

open access: yesAdvanced Materials Interfaces, EarlyView.
The gas‐phase decomposition of Al(acac)3 is investigated under inert, oxygen, and water‐containing conditions. Water is found to promote selective ligand removal and suppress hydrocarbon formation, while oxygen induces faster, less selective decomposition pathways.
Ilyas Adaköy   +8 more
wiley   +1 more source

Boost for black silicon

open access: yesMaterials Today, 2013
openaire   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

Pyrolysis Induced Interphase and Structural Stabilization of Silicon‐Tin Disulfide/PAN Composite Electrode Materials for Li‐Ion Batteries

open access: yesAdvanced Materials Interfaces, EarlyView.
A Si and SnS2 based dual‐alloy anode material for metal‐ion battery applications with improved structural, interfacial and electrochemical properties is synthesized via a single‐step solid‐state pyrolysis process. During the pyrolysis step, SnS2 and Si are embedded in a porous, carbonized PAN‐based matrix, which is electronically and ionically ...
Akzhan Bekzhanov   +2 more
wiley   +1 more source

Fiber‐Endface‐Integrated PdSe2/2H‐MoTe2 Heterojunction Photodetector for Broadband Linear‐Polarization Detection

open access: yesAdvanced Materials Interfaces, EarlyView.
An all‐in‐fiber broadband polarization photodetector is demonstrated by integrating a PdSe2/2H‐MoTe2 van der Waals heterostructure onto a fiber endface. The device exhibits broadband response spanning 532 nm to 1630 nm, a fast response time of 59 µs, and a polarization ratio of 1.99. This work demonstrates a promising hardware strategy for polarization
Zexing Zheng   +11 more
wiley   +1 more source

Stabilizing Electrochemical Interfaces With Multifunctional Cobalt Nitride Layers

open access: yesAdvanced Materials Interfaces, EarlyView.
Cobalt nitrides emerged recently as an interesting class of earth‐abundant oxygen evolution catalysts. Herein, plasma‐enhanced atomic layer deposition is used to synthesize multifunctional cobalt nitride layers that simultaneously protect and catalytically activate photoelectrode surfaces.
Matthias Kuhl   +7 more
wiley   +1 more source

Home - About - Disclaimer - Privacy