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An ultra‐black silicon absorber
Laser and Photonics Reviews, 2014AbstractAn ultra‐black (A > 99%) broadband absorber concept on the basis of a needle‐like silicon nanostructure called Black Silicon is proposed. The absorber comprises Black Silicon established by inductively coupled plasma reactive ion etching (ICP‐RIE) on a highly doped, degenerated silicon substrate.
Martin Steglich +2 more
exaly +2 more sources
Advanced Optical Materials, 2014
This article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black silicon solar cells have cooperated for this study.
Martin Otto +15 more
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This article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black silicon solar cells have cooperated for this study.
Martin Otto +15 more
openaire +1 more source
SPIE Proceedings, 2012
The challenge of future solar cell technologies is the combination of highly efficient cell concepts and low cost fabrication processes. A promising concept for high efficiencies is the usage of nanostructured silicon, so-called black silicon. Due to its unique surface geometry the optical path of the incoming light through the silicon substrate is ...
Kevin Füchsel +8 more
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The challenge of future solar cell technologies is the combination of highly efficient cell concepts and low cost fabrication processes. A promising concept for high efficiencies is the usage of nanostructured silicon, so-called black silicon. Due to its unique surface geometry the optical path of the incoming light through the silicon substrate is ...
Kevin Füchsel +8 more
openaire +1 more source
physica status solidi c, 2011
AbstractBlack silicon is a fascinating multipurpose modification of bulk silicon which can be fabricated in a selforganized structure formation process during dry etching of bare silicon wafer leading to the formation of a high density of silicon needles. The smallest dimension of the tips approaches values between 1 and 2 nm. The silicon nanostructure
Jörg Pezoldt +3 more
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AbstractBlack silicon is a fascinating multipurpose modification of bulk silicon which can be fabricated in a selforganized structure formation process during dry etching of bare silicon wafer leading to the formation of a high density of silicon needles. The smallest dimension of the tips approaches values between 1 and 2 nm. The silicon nanostructure
Jörg Pezoldt +3 more
openaire +1 more source
Black Silicon Solar Cells with Black Ribbons
201632nd European Photovoltaic Solar Energy Conference and Exhibition; 631 ...
Schmidt Davidson, R. +7 more
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Journal of Applied Physics, 2011
“Black etching” has been proposed previously as a method for the nanoscale texturing of silicon surfaces, which results in an almost complete suppression of reflectivity in the spectral range of absorption relevant for photovoltaics. The method modifies the topmost 150 to 300 nm of the material and thus also is applicable for thin films of silicon. The
Koynov, Svetoslav +2 more
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“Black etching” has been proposed previously as a method for the nanoscale texturing of silicon surfaces, which results in an almost complete suppression of reflectivity in the spectral range of absorption relevant for photovoltaics. The method modifies the topmost 150 to 300 nm of the material and thus also is applicable for thin films of silicon. The
Koynov, Svetoslav +2 more
openaire +1 more source
Black silicon integrated aperture
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2017This paper describes the incorporation of nanotextured black silicon as an optical absorbing material into silicon-based micro-optoelectromechanical systems devices to reduce stray light and increase optical contrast during imaging. Black silicon is created through a maskless dry etch process and characterized for two different etch conditions, a cold ...
David L. Dickensheets, Tianbo Liu
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Electrical properties of black silicon
SPIE Proceedings, 2012Black silicon thin films with supersaturated heavily doped sulfur were fabricated on silicon substrates through femtosecond laser scanning the silicon substrate surface in SF6 atmosphere. The temperature characteristics of the carrier concentration and mobility of the two-layer structure, black silicon films/silicon substrate, were measured with ...
Zhengxi Cheng, Yongping Chen, Bin Ma
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