Results 211 to 220 of about 141,358 (257)
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Diode Lasers in Car‐Body Construction
Laser Technik Journal, 2013AbstractFor more than twelve years, diode lasers are used in series body manufacturing. The first diode laser was installed for brazing tailgates in the Audi A3 in 2001. The most recent generation was introduced last year [1]. For the current model, diode lasers braze tailgates and now even produce the joints between roof and side panels (Fig. 1).
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Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel SiC Schottky diodes have been demonstrated recently. However, there are few studies of the surge current capability of the SiC MOSFET's body diode, leading severe concern for its ruggedness in practical power converter applications.
Xi Jiang +7 more
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A flexible ultra-thin-body SOI single-photon avalanche diode
2013 IEEE International Electron Devices Meeting, 2013The world's first flexible ultra-thin-body SOI single-photon avalanche diode (SPAD) is reported with peak photon detection probability (PDP) at 11%, dark count rate (DCR) around 20kHz and negligible afterpulsing and cross-talk. It compares favorably with CMOS SPADs while it can be bended to 10mm-diameter and operate both in frontside-(FSI) and backside-
Pengfei Sun +3 more
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Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs
IEEE Transactions on Electron Devices, 2019A compact model for tunnel diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio frequency (RF) performance of a TDBC SOI MOSFET. The TDBC SOI MOSFETs are successfully fabricated and are used to measure important transistor electrical ...
Yongwei Chang +7 more
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Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode
IEEE Electron Device Letters, 2014Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different ...
Arash Elhami Khorasani +2 more
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A PMOS-diode Differential Body-driven Offset compensated 0.5V
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), 2007This paper reports a new 0.5 V supply resolution CMOS comparator suitable for biosensor applications. The comparator uses a body-driven PMOS-diode differential pair and compensates for differential body-input referred offset-voltage through single-ended sampled-data pre-amplification.
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Optimization of power MOSFET body diode for speed and ruggedness
IEEE Transactions on Industry Applications, 1990The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of operation. A failure mechanism is proposed and discussed. It is found that through improved design with
H. Yilmaz +3 more
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Robustness of MOSFET devices under hard commutation ofthe body diode
2013 15th European Conference on Power Electronics and Applications (EPE), 2013This paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutation of the body diode can represent a challenging mode of operation in regards to the ruggedness of power ...
R. Siemieniec +4 more
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Modelling, analysis, and experimental study of SiC JFET body diode
The European Physical Journal Applied Physics, 2010Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power. PiN diode.
Ben Salah, Tarek +2 more
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In vivo dosimetry with silicon diodes in total body irradiation
Radiation Physics and Chemistry, 2014Abstract The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence.
F.F. Oliveira +3 more
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