Results 21 to 30 of about 391,526 (305)
Silver-modified polyniobotungstate based on Nb/W mixed-addendum polyoxometalate with formula Ag9[P2W15Nb3O62]·21H2O (Ag-Nb/W) was synthesized and then characterized by various analytical and spectral techniques.
Shujun Li +7 more
doaj +1 more source
Defect-induced B4C electrodes for high energy density supercapacitor devices
Boron carbide powders were synthesized by mechanically activated annealing process using anhydrous boron oxide (B2O3) and varying carbon (C) sources such as graphite and activated carbon: The precursors were mechanically activated for different times in ...
Özge Balcı +5 more
doaj +1 more source
Use of Underground Mining Activities in Earthquake Search and Rescue Works
Although the mining sector has the task of providing raw materials directly or indirectly to industrial establishments, it unfortunately contains great dangers and risks for its employees in terms of occupational health and safety ...
Süleyman Sırrı Sargın +1 more
doaj +1 more source
Synthesis and Strong Solvatochromism of Push-Pull Thienylthiazole Boron Complexes
The solvatochromic behavior of two donor-π bridge-acceptor (D-π-A) compounds based on the 2-(3-boryl-2-thienyl)thiazole π-linker and indandione acceptor moiety are investigated.
Martijn J. Wildervanck +2 more
doaj +1 more source
C7H11LiN2O, monoclinic, P21/c (no. 14), a = 8.9067(1) Å, b = 8.6975(1) Å, c = 10.2398(1) Å, β = 101.900(3)°, V = 770.491(15) Å3, Z = 4, R gt(F) = 0.0338, wR ref(F 2) = 0.0925, T = 100 K.
Zapf Ludwig, Finze Maik
doaj +1 more source
Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies [PDF]
Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied.
Boukhvalov, D. W. +6 more
core +1 more source
Hard boron rich boron nitride nanoglasses
Abstract Boron‐rich amorphous boron nitride (B x N 1− x , 0.55 ≤ x ≤ 0.95) alloys ...
Ayşegül Ö. Çetin, Murat Durandurdu
openaire +2 more sources
Shouldering in B diffusion profiles in Si: Role of di-boron diffusion [PDF]
The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (B-s-B-i) diffusion can become as important as boron-interstitial pair (B-s-Si-i) diffusion when both boron concentration and annealing ...
Goddard, William A., III +1 more
core +1 more source
Boron Abundances in Main Sequence B-type Stars: A Test of Rotational Depletion during Main Sequence Evolution [PDF]
Boron abundances have been derived for seven main sequence B-type stars from HST STIS spectra around the B III 2066 A line. In two stars, boron appears to be undepleted with respect to the presumed initial abundance.
A. M. Brooks +29 more
core +2 more sources
Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures [PDF]
The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation,
Parker, Evan H. C. +4 more
core +1 more source

