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The Microstructure, Mechanical, and Friction-Wear Properties of Boron Carbide-Based Composites with TiB2 and SiC Formed In Situ by Reactive Spark Plasma Sintering. [PDF]
Materials (Basel)Twardowska A, Kowalski M.
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Tuning the deformation mechanisms of boron carbide via silicon doping. [PDF]
Sci Adv, 2019 Xiang S +11 more
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The Effects of Carbon Content on the Anisotropic Deformation Mechanism of Boron Carbide. [PDF]
Materials (Basel), 2018 Li J, Liu L, Xu S, Zhang J, Wu Y.
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Hybrid Network Structure of Hexagonal Boron Nitride-Silicon Carbide Whisker to Improve the Performance of the Polybenzoxazine with KH560-Boron Nitride. [PDF]
Polymers (Basel)An Q +10 more
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Microstructural characterization of boron-rich boron carbide
Acta Materialia, 2017Abstract Boron carbide has a wide range of solubility, but the effects of stoichiometry on its microstructure and mechanical response are not well understood. In this study, detailed microstructural characterization was carried out on three hot-pressed B-rich boron carbide samples.
Kelvin Y. Xie +10 more
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International Journal of Refractory Metals and Hard Materials, 1999
Based on a simple principle of order: i.e. the ability of the metal species to form or not to form binary bondes, binary carbides and ternary compounds, phase equilibria of all hitherto known ternary metal boron systems are classified by four major categories. Compound formation is generally observed with rather electropositive metal elements.
P. Rogl, H. Bittermann
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Based on a simple principle of order: i.e. the ability of the metal species to form or not to form binary bondes, binary carbides and ternary compounds, phase equilibria of all hitherto known ternary metal boron systems are classified by four major categories. Compound formation is generally observed with rather electropositive metal elements.
P. Rogl, H. Bittermann
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Asymmetric twins in boron rich boron carbide
Physical Chemistry Chemical Physics, 2018Twin boundaries (TBs) play an essential role in enhancing the mechanical, electronic and transport properties of polycrystalline materials.
Xiaokun Yang, William A. Goddard, Qi An
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Russian Journal of General Chemistry, 2019
The issues of the composition-structure relationship of boron carbide are discussed. A new hypothesis based on the presence of channels with a diameter of 2.7–2.9 A in crystals, into which C or B atoms can be intruded, has been proposed. The intrusion has been confirmed by the data of quantum-chemical simulation using VASP program.
S. V. Konovalikhin +3 more
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The issues of the composition-structure relationship of boron carbide are discussed. A new hypothesis based on the presence of channels with a diameter of 2.7–2.9 A in crystals, into which C or B atoms can be intruded, has been proposed. The intrusion has been confirmed by the data of quantum-chemical simulation using VASP program.
S. V. Konovalikhin +3 more
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Phosphorus doping of boron carbides
Physical Review B, 1993Substitution of an electron donor such as phosphorus for a carbon or boron atom in [ital p]-type semiconducting boron carbides is expected to reduce the hole concentration. Phosphorus-doped boron carbide samples have been prepared by hot isostatic pressing with homogeneous dopant levels of up to one phosphorus atom per ten unit cells.
, Aselage +8 more
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