Results 21 to 30 of about 739,269 (304)

Breakdown Cause and Effect Analysis. Case Study

Management Systems in Production Engineering, 2018
Every company must ensure that the production process proceeds without interferences. Within this article, the author uses the term “interferences” in reference to unplanned stoppages caused by breakdowns. Unfortunately, usually due to machine operators’
Biały Witold, Ružbarský Juraj
doaj   +1 more source

Preventive Maintenance Strategy Based on Automated Assets Management / Стратегия предупреждения поломки основных средств предприятия на основе автоматизации процесса управления ими

Beneficium, 2020
The article studies the features of implementation of strategies to prevent breakdown of fixed assets of the enterprise based on automated assets management.
MaximK. Izmaylov / Максим К. Измайлов
doaj   +1 more source

A Study on the Role of Pre-Cleaning and a New Method to Strengthen Gate Oxide Quality

Nanomaterials, 2022
Isopropyl alcohol (IPA) has been conventionally used for pre-cleaning processes. As the device size decreased, the gate oxide layer became thinner. As a result, the quality of the gate oxide was degraded by a pre-cleaning process, and oxide reliabilities
In-Kyum Lee, Byoung-Deog Choi
doaj   +1 more source

Spontaneous Breakdown of Superhydrophobicity [PDF]

Physical Review Letters, 2007
Accepted for publication in Physical Review ...
SBRAGAGLIA, MAURO, Peters, Am, Pirat, C, Borkent, Bm, Lammertink, Rgh, Wessling, M, Lohse, D.   +6 more
openaire   +5 more sources

Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials

Molecules, 2023
In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low-k) materials have been investigated in terms of metal gate area and geometry and thickness of dielectric film ...
Yi-Lung Cheng, Wei-Fan Peng, Chi-Jia Huang, Giin-Shan Chen, Jau-Shiung Fang   +4 more
doaj   +1 more source

Breakdown and asymptotic properties of resampled estimates [PDF]

, 1995
In this paper we study the breakdown and asymptotic properties of resampled t-estimates. We find that they retain the finite breakdown point of the exact estimator.
Blanco, Ana M., Adrover, Jorge
core   +1 more source

Eastern filbert blight resistant Corylus avellana identified from 20 years of germplasm introduction and evaluation at Rutgers University, New Jersey, USA

Frontiers in Plant Science
The stem canker disease eastern filbert blight (EFB), caused by Anisogramma anomala, is a major impediment of European hazelnut (Corylus avellana) production in the United States.
Daniel C. Jacobs, Ronald S. Revord, John M. Capik, Thomas J. Molnar   +3 more
doaj   +1 more source

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

Crystals, 2022
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination.
Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, James C. Gallagher, Robert J. Kaplar, Brendan P. Gunning, Karl D. Hobart, Travis J. Anderson   +7 more
doaj   +1 more source

Safety of Daprodustat for the Treatment of Chronic Kidney Disease Anemia: Final Analysis of a Multicenter Postmarketing Surveillance Study in Japan

Therapeutic Apheresis and Dialysis, EarlyView.
ABSTRACT Introduction This final analysis of a multicenter, prospective postmarketing surveillance study evaluated the safety of daprodustat in patients with chronic kidney disease anemia in routine clinical practice in Japan. Methods Patients who initiated daprodustat between September 2020 and July 2022 were registered.
Tadao Akizawa, Kyomi Kanaya, Kiyomi Aizawa, Masanori Onoki, Hirofumi Ozeki, Kazuko Suzuki, Ai Hayashi, Tomohiko Asamura   +7 more
wiley   +1 more source

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni, FURNO M   +3 more
core   +1 more source