Results 31 to 40 of about 987,593 (306)

Pre-Breakdown Streamer Propagation and Positive Lightning Breakdown Characteristics of Palm Oil Impregnated Aged Pressboard

IEEE Access, 2020
This paper presents the investigation on the breakdown characteristics and pre-breakdown streamer propagation of Palm Oil (PO) impregnated aged pressboard under positive lightning impulse voltages.
Yee Von Thien, Norhafiz Azis, Jasronita Jasni, Mohd Zainal Abidin Ab Kadir, Robiah Yunus, Zaini Yaakub   +5 more
doaj   +1 more source

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS [PDF]

, 2010
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed
Hughes, Greg, Kauerauf, Thomas, O'Connor, Robert, Ragnarsson, Lars-Ake   +3 more
core   +1 more source

A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs

Applied Sciences
Breakdown characteristics play an important role in silicon carbide (SiC) power devices; however, the wide bandgap of SiC poses a challenge for numerical simulation of breakdown characteristics.
Yuanzhao Hu, Fei Liu, Xiaoyan Liu
doaj   +1 more source

Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect

, 2006
We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically ...
Hamaya, K., Kawamura, M., Machida, T., Masubuchi, S., Sugihara, K., Takahashi, H.   +5 more
core   +1 more source

Fast physical models for Si LDMOS power transistor characterization [PDF]

, 2007
A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a ...
Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J, Snowden, CM   +6 more
core   +1 more source

The Progress and Prospect of Gap Breakdown Characteristics and Discharge Mechanisms of Overhead Transmission Lines Under Vegetation Fire Conditions

Energies
Wildfires frequently occur, posing a significant threat to the operational stability of transmission lines across mountainous forest areas. Therefore, this paper reviews numerous studies conducted by domestic and international scholars on the gap ...
Haohua Hu, Peng Li, Daochun Huang
doaj   +1 more source

Structural instability impairs function of the UDP‐xylose synthase 1 Ile181Asn variant associated with short‐stature genetic syndrome in humans

FEBS Letters, EarlyView.
The Ile181Asn variant of human UDP‐xylose synthase (hUXS1), associated with a short‐stature genetic syndrome, has previously been reported as inactive. Our findings demonstrate that Ile181Asn‐hUXS1 retains catalytic activity similar to the wild‐type but exhibits reduced stability, a looser oligomeric state, and an increased tendency to precipitate ...
Tuo Li, Pedro A. Sánchez‐Murcia, Bernd Nidetzky   +2 more
wiley   +1 more source

Gut microbiome and aging—A dynamic interplay of microbes, metabolites, and the immune system

FEBS Letters, EarlyView.
Age‐dependent shifts in microbial communities engender shifts in microbial metabolite profiles. These in turn drive shifts in barrier surface permeability of the gut and brain and induce immune activation. When paired with preexisting age‐related chronic inflammation this increases the risk of neuroinflammation and neurodegenerative diseases.
Aaron Mehl, Eran Blacher
wiley   +1 more source

Research on breakdown characteristics of 4H-SiC PIN avalanche diode in single-zone JTE terminal structure

Nantong Daxue xuebao. Ziran kexue ban, 2022
As the third generation of wide band gap semiconductor material, SiC has high critical electric field, high thermal conductivity and other characteristics, and the PIN power diode devices made from this material can meet the requirements of high pressure,
CHEN Hongfu; WANG Yijin; YU Yanwei; CHEN Zhipeng; HE Jiacheng; GAO Zijian; LUO Man; YU Chenhui
doaj   +1 more source

Non-Linear I-V Characteristics of Double Schottky Barriers and Polycrystalline Semiconductors

, 1992
An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc bias.
Bernasconi, Blatter, Blatter, Clerc, E. Canessa, Eda, Eda, Einzinger, Greuter, Kenkel, Kirkpatrick, Levinson, Levinson, Levinson, Mahan, Mahan, Mahan, McLachlan, Niemeyer, Olsson, Olsson, Olsson, Petermann, Pike, Seager, Takayasu, Tao, Tonkoshkur, Tua, V.L. Nguyen, Werner   +30 more
core   +1 more source