Results 11 to 20 of about 987,593 (306)

Degradation and breakdown characteristics of thin MgO dielectric layers [PDF]

open access: yes, 2010
MgO has been suggested as a possible high-k dielectric for future complementary metal-oxide semiconductor processes. In this work, the time dependent dielectric breakdown (TDDB) characteristics of 20 nm MgO films are discussed.
Degraeve R.   +5 more
core   +1 more source

Experimental study on the partial discharge and AC breakdown properties of C(4)F(7)N/CO(2) mixture

open access: yesHigh Voltage, 2019
As an environmental friendly insulating medium, C(4)F(7)N has received extensive attention in the past two years. In this study, the partial discharge (PD) and breakdown characteristics of C(4)F(7)N/CO(2) gas mixture were investigated using the gas ...
Yi Li   +8 more
doaj   +1 more source

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

open access: yesMicromachines, 2022
This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate (FP) for improved breakdown voltage.
Jun-Ho Lee   +7 more
doaj   +1 more source

Dielectric breakdown characteristics of clean oil

open access: yesConference Record of the 1992 IEEE International Symposium on Electrical Insulation, 1993
The dielectric strength of highly filtered and dehydrated oil was investigated with AC and impulse voltages. The influence of particles on breakdown strength is discussed, taking into account the particle content factor. The scale effect of superclean oil, which was obtained from a modern cleaning system, is studied from a statistical viewpoint.
Hiroshi Kurita   +2 more
openaire   +2 more sources

Breakdown Characteristic Research on Propylene Carbonate After Nano-Modification

open access: yesFrontiers in Physics, 2022
Propylene carbonate (PC) has the advantages of great permittivity, high breakdown strength, and great environmental adaptability. However, the applications of propylene carbonate in pulsed power systems have been restricted by the significant polarity ...
Zhang Zicheng   +5 more
doaj   +1 more source

Electrical characterization of the soft breakdown failure mode in MgO layers [PDF]

open access: yes, 2009
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is ...
American Physical Society   +9 more
core   +4 more sources

Effect of Moisture on Breakdown Characteristics of Oil paper Insulation in Complicated Electric Field

open access: yesJournal of Harbin University of Science and Technology, 2020
In order to study the effect of moisture on breakdown characteristics of oilpaper insulation in complex electric field, this paper obtains the dielectric constant characteristics, conductive characteristics, dielectric loss characteristic and breakdown ...
LIU Qingsong   +5 more
doaj   +1 more source

Review of developments on polymers’ breakdown characteristics and mechanisms on a nanosecond time scale

open access: yesAIP Advances, 2020
The breakdown of polymer insulators at a nanosecond scale is a serious problem for high-voltage devices and pulsed power systems. This paper reviews recent developments in research on the mechanisms and characteristics of the breakdown of polymers at a ...
Liang Zhao, Jian Cang Su, Chun Liang Liu
doaj   +1 more source

Probabilistic Description of Traffic Breakdowns [PDF]

open access: yes, 2001
We analyze the characteristic features of traffic breakdown. To describe this phenomenon we apply to the probabilistic model regarding the jam emergence as the formation of a large car cluster on highway.
B. Persaud   +19 more
core   +1 more source

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT

open access: yesMicromachines, 2021
In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state ...
Abdelkrim Khediri   +4 more
doaj   +1 more source

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