Results 31 to 40 of about 4,689,601 (244)
Energies, 2018 This paper is devoted to a comparison study of the breakdown voltage of CO2, N2, and SF6 gases, and CO2–SF6 and N2–SF6 mixtures under different voltage waveforms, namely AC, DC, and lightning impulse voltages, in point–plane and sphere–sphere electrode ...
Abderrahmane Beroual +2 more
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Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation
Micromachines, 2022 A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao +11 more
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Evolution of the deformation profile of a horizontal thin ethanol layer when heated locally
MATEC Web of Conferences, 2017 Thermocapillary breakdown of thin horizontal layer of ethanol when heated from a localized heat source was studied experimentally. The influence of layer depth on the breakdown process was investigated.
Spesivtsev Serafim, Lyulin Yuriy
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Energies, 2019 Tip leakage vortex (TLV) in a transonic compressor rotor was investigated numerically using detached-eddy simulation (DES) method at different working conditions.
Xiangyu Su +3 more
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City traffic flow breakdown prediction based on fuzzy rough set
Open Physics, 2017 In city traffic management, traffic breakdown is a very important issue, which is defined as a speed drop of a certain amount within a dense traffic situation.
Yang Xu +3 more
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Comparative Performance of Several Robust Linear Discriminant Analysis Methods
Revstat Statistical Journal, 2007 The problem of the non-robustness of the classical estimates in the setting of the quadratic and linear discriminant analysis has been addressed by many authors: Todorov et al. [19, 20], Chork and Rousseeuw [1], Hawkins and McLachlan [4], He and Fung [5]
Valentin Todorov , Ana M. Pires
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Reliability Prediction of Highly Scaled MOSFET Devices via Fractal Structure of Spatial Defects
IEEE Access, 2019 The needs for continuous size reduction of metal-oxide-semiconductor field effect transistor (MOSFET) devices can cause serious reliability concerns. In particular, gate oxide breakdown is a key mechanism concerning the lifetimes of MOSFET devices.
Seong-Joon Kim, Man Soo Kim, Suk Joo Bae
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IEEE Journal of the Electron Devices Society, 2021 A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time.
Baoxing Duan +3 more
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Therapeutic Apheresis and Dialysis, EarlyView.ABSTRACT Background Establishing a comprehensive apheresis medicine program in a resource‐constrained setting presents significant structural, financial, and logistical challenges. Despite the growing clinical importance of apheresis services globally, published experience from sub‐Saharan Africa remains sparse.
Folasade Adelekan‐Popoola +4 more
wiley +1 more source
To infinity and some glimpses of beyond
Nature Communications, 2017 Certain physical problems such as the rupture of a thin sheet can be difficult to solve as computations breakdown at the point of rupture. Here the authors propose a regularization approach to overcome this breakdown which could help dealing with ...
Panayotis G. Kevrekidis +2 more
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