Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications. [PDF]
Micromachines (Basel), 2023 Liu AC +5 more
europepmc +1 more source
Influence of the epilayer properties on breakdown voltage and noise behaviour of GaAs MESFETs [PDF]
, 1978 C. Tsironis
openalex +1 more source
Residual Stress States in Microstructurally Graded PBF–LB/M Austenitic Steel Components
Advanced Engineering Materials, EarlyView.This study examines microstructurally graded 316L rectangular tube profiles fabricated via PBF–LB/M using a dual‐laser system. A 1 kW top‐hat and a 400 W Gaussian laser create distinct grain sizes and crystallographic texture. Mechanical properties are linked to microstructural evolution driven by processing conditions.
Nico Möller +5 more
wiley +1 more source
A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage. [PDF]
Micromachines (Basel), 2021 Liu D +6 more
europepmc +1 more source
Power transistor switching characterization [PDF]
The switching properties of power transistors are investigated. The devices studied were housed in IO-3 cases and were of an n(+)-p-n(-)-n(+) vertical dopant structure.
Blackburn, D. L.
core +1 more source
Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect
, 2006 We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically ...
Hamaya, K. +5 more
core +1 more source
Advanced Engineering Materials, EarlyView.Prestraining the substrate influences coating formation process. Higher prestraining force leads to higher coating thickness and lower hardness. Increase in prestraining force enhances preliminary damage in hard anodic coating. Fatigue damage mechanisms change for hard anodized prestrained samples.
Linto George Thomas +4 more
wiley +1 more source
Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. [PDF]
Micromachines (Basel), 2021 Khediri A +4 more
europepmc +1 more source
Advanced Engineering Materials, EarlyView.This study aims to establish a link between the dielectric properties of polyamide 12 (PA12) and its thermal and rheological properties using dielectric analysis (DEA). A standardized methodology is introduced to determine melting and crystallization temperatures.
Benedikt Burchard +2 more
wiley +1 more source
Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. [PDF]
Micromachines (Basel), 2021 Xia X, Guo Z, Sun H.
europepmc +1 more source