Results 81 to 90 of about 3,896 (209)

The problems of Langasite single crystals growth and their solution

open access: yesТонкие химические технологии, 2008
The problems of Langasite single crystals growth by Czochralski and Bridgman methods were analyzed. It was found that the deferent kinds of defects in langasite crystals influence on physical properties and thus on langasite crystals application.
E. N. Domoroshchina   +2 more
doaj  

Crystal growth of CuInSe2 by the Bridgman method

open access: yes, 1989
Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose.
L. S. Yip   +3 more
core   +1 more source

Growth, characterization and optical quality of calcium fluoride single crystals grown by the Bridgman method

open access: yes, 2016
Calcium fluoride - CaF2 single crystals were grown using the Bridgman technique. By optimizing growth conditions, lt 111 gt -oriented CaF2, crystals up to 20 mm in diameter were grown.
Trajić, Jelena   +6 more
core  

X-ray scattering studies of compound semiconductors [PDF]

open access: yes, 1997
In this thesis, techniques of high resolution x-ray diffraction, topography and grazing incidence reflectivity have been employed in order to gain information on compound semiconductors. A recent growth technique. Vertical Gradient Freeze (VGF), has been
Moore, C.D., Moore, Caroline Dale
core  

Crystal Structure and Surface Model of Semiconductor Cd (S0,5 Te0,5) Preparation Result with Bridgman Method in Various Variations of Heating Variation

open access: yes, 2018
Abstrak Tujuan penelitian ini adalah untuk mengetahui proses penumbuhan kristal Cd(S0,5 Te0,5) dengan metode Bridgman, mengetahui pengaruh alur pemanasan terhadap struktur kristal dan parameter kisi kristal yang terbentuk, serta mengetahui pengaruh alur ...
Ariswan, Risma Widayati ,
core   +1 more source

Impurity diffusion in the melt in crystal production by bridgman's method [PDF]

open access: yesJournal of engineering physics, 1971
An approximate solution is derived for the one-dimensional diffusion of impurities in a melt in directional crystallization within a restricted volume and motion of the interface and constant speed. Results are given for the position of the diffusion layer and the impurity concentration.
openaire   +1 more source

Study of different Cadmium Telluride Materials doped with V, Zn and Cl grown by vertical Bridgman Furnace and by THM.

open access: yes, 1994
The properties of Cadmium Telluride are very sensitive to impurities. The growth method has also a strong impact on the material characteristics. Crystals grown by THM have good X-ray detector properties, while normal undoped Bridgman grown crystals do ...
J.M. Koebel   +4 more
core   +1 more source

GROWTH OF CuIn13S20 SINGLE CRYSTALS AND STRUCTURES ON THEIR BASIC

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2019
Using the method of directional solidification (the vertical Bridgman method) single crystals CuIn13S20 were grown. The composition and structure of the obtained crystals were defined.
V. V. Shatalova
doaj  

Study of different Cadmium Telluride Materials doped with V, Zn and Cl grown by vertical Bridgman Furnace and by THM.

open access: yes, 1993
The properties of Cadmium Telluride are very sensitive to impurities. The growth method has also a strong impact on the material characteristics. Crystals grown by THM have good X-ray detector properties, while normal undoped Bridgman grown crystals do ...
J.M. Koebel   +4 more
core   +1 more source

Heterojunction on the basis of FeIn₂Se₄ crystal obtained by the Bridgman method

open access: yesТехнологія та конструювання в електронній апаратурі, 2007
FeIn2Se4 crystals with a layered structure and magnetic component were grown by the Bridgman method. Heterojunctions of type n-InSe–p-FeIn₂Se₄ were fabricated.
Z. D. Kovalyuk   +3 more
doaj  

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