Photoelectrochemical-Type Photodetectors Based on Ball Milling InSe for Underwater Optoelectronic Devices [PDF]
In this paper, InSe nanosheets were synthesized by a ball milling method, and photoelectrochemical-type photodetectors (PEC PDs) based on the ball milling InSe (M-InSe) were fabricated using simulated seawater as the electrolyte.
Yi Xu +5 more
doaj +2 more sources
DFT Exploration of a Pd-Doped InSe Monolayer as a Novel Gas Sensing Candidate upon SF6 Decomposition: SO2, SOF2, and SO2F2 [PDF]
Monitoring SF6 decomposition gases has emerged as a vital diagnostic technique for evaluating insulation conditions and identifying faults in SF6-based electrical equipment.
Xu Yang, Hao Cui, Zhongchao Liu, Yun Liu
doaj +2 more sources
Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe [PDF]
Building vertical van der Waals heterojunctions between two-dimensional layered materials has become a promising strategy for modulating the properties of two-dimensional materials. Herein, we investigate the electronic structures of non-twisted/twisted bilayer InSe/InSe and heterobilayer graphene/InSe (Gr/InSe) by employing density functional theory ...
Xiaojing Yao, Xiuyun Zhang
openaire +3 more sources
Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions [PDF]
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique.
Latifah Hamad Khalid Alfhaid +2 more
doaj +1 more source
Effect of Substrate Roughness on the Friction and Wear Behaviors of Laser-Induced Graphene Film
A rough substrate usually induces severe detriments limiting the performance of anti-friction materials that would lead to an increase in both the friction coefficient and wear rate.
Peidong Xue, Zhiquan Huang, Cheng Chen
doaj +1 more source
Negative photoconductivity (NPC) exhibits great potential in the field of photodetection due to low power consumption and high response. Herein, the photodetectors based on InSe and multilayer graphene (MLG)/InSe van der Waals heterostructure are ...
Boyao Cui +8 more
doaj +1 more source
A two-dimensional (2D) material known as indium selenide (InSe) is widely considered a promising layered semiconductor with potential applications in electronics and optoelectronics. However, the single phase of InSe is still a challenge due to the close
Sheng-Wei Hsiao +8 more
doaj +1 more source
Photon excitation effect on formation of graphene nanocrystallites during carbon film growth process
In this article, we propose a method to deposit nanocrystallite embedded carbon films by electron cyclotron resonance plasma sputtering with photon irradiation cooperated with electron or Ar+ ion irradiation.
Cheng Chen +4 more
doaj +1 more source
Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are
Chia-Hsing Wu +7 more
doaj +1 more source
Mechanisms of electrical conductivity, quantum capacity and negative capacitance effects in InSe nanohybrid [PDF]
In this work, we present findings on the syntheses and study of properties of InSe nanohybrid. The introduction of guest component in GaSe matrix leads to an increase in inhomogeneities, which is clearly confirmed by the strengthening of the low ...
Fedir Ivashchyshyn +8 more
doaj +1 more source

