Results 1 to 10 of about 5,450 (225)
Nanomaterials, 2021 The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a ...
Yadong Zhang +6 more
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Photoelectrochemical-Type Photodetectors Based on Ball Milling InSe for Underwater Optoelectronic Devices [PDF]
NanomaterialsIn this paper, InSe nanosheets were synthesized by a ball milling method, and photoelectrochemical-type photodetectors (PEC PDs) based on the ball milling InSe (M-InSe) were fabricated using simulated seawater as the electrolyte.
Yi Xu +5 more
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DFT Exploration of a Pd-Doped InSe Monolayer as a Novel Gas Sensing Candidate upon SF6 Decomposition: SO2, SOF2, and SO2F2 [PDF]
SensorsMonitoring SF6 decomposition gases has emerged as a vital diagnostic technique for evaluating insulation conditions and identifying faults in SF6-based electrical equipment.
Xu Yang, Hao Cui, Zhongchao Liu, Yun Liu
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Growth and Characterization of Inse/Ge Interfaces
Optik, 2017 Qasrawi, Atef Fayez/0000-0001-8193-6975In the current study, we report the effect of insertion of a 200 nm thick Ge film between two layers of InSe. The Ge sandwiched InSe films are studied by means of X-ray diffraction technique, energy dispersion X-ray
Omareye, Olfat A. +3 more
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Physica E: Low-Dimensional Systems and Nanostructures, 2014 Dogan, Seydi/0000-0001-9785-4990; Duman, Songul/0000-0002-3091-3746; GURBULAK, BEKIR/0000-0002-5343-4107Undoped InSe and Ag doped InSe (InSe:Ag) single crystals have been grown by using the Bridgman/Stockbarger method.
B Gurbulak, Mehmet Sata, S Dogan
exaly +2 more sources
Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure
Nanoscale, 2017 Enhancement of hole mobility in InSe monolayer by forming an InSe/BP vdW heterostructure with type-II band alignment.
Min Zhang +9 more
core +3 more sources
Monolayer fluoro-InSe : formation of a thin monolayer via fluorination of InSe [PDF]
Physical Review B, 2019 : By performing density functional theory-based first-principles calculations, the formation of a thin monolayer structure, namely InSeF, via fluorination of monolayer InSe is predicted.
Yagmurcukardes, Mehmet
core +3 more sources
Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
Фізика і хімія твердого тіла, 2017 We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe.
V. M. Katerynchuk +5 more
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Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe [PDF]
ACS Omega, 2021 Building vertical van der Waals heterojunctions between two-dimensional layered materials has become a promising strategy for modulating the properties of two-dimensional materials. Herein, we investigate the electronic structures of non-twisted/twisted bilayer InSe/InSe and heterobilayer graphene/InSe (Gr/InSe) by employing density functional theory ...
Xiaojing Yao, Xiuyun Zhang
openaire +3 more sources
Heterostructures manufactured by annealing of InSe monocrystals in sulfur vapor [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009 InS/InSe heterostructures were created by a long-term (during 120 h) thermal processing of InSe monocrystals in sulfur vapor. Investigations of electrical and photoelectric properties of structures manufactured by this method showed essential advantage ...
Kovalyuk Z. D. +3 more
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