Photoelectrochemical-Type Photodetectors Based on Ball Milling InSe for Underwater Optoelectronic Devices [PDF]
In this paper, InSe nanosheets were synthesized by a ball milling method, and photoelectrochemical-type photodetectors (PEC PDs) based on the ball milling InSe (M-InSe) were fabricated using simulated seawater as the electrolyte.
Yi Xu +5 more
doaj +3 more sources
Strain Engineering of Second-Harmonic Generation and Symmetry Breaking in Few-Layer ε-InSe [PDF]
ε-phase indium selenide (ε-InSe), a non-centrosymmetric van der Waals layered semiconductor, exhibits broken inversion symmetry in all layer numbers, giving rise to exceptional second-order nonlinear optical responses and holding great promise for ...
Danliang Zhang +4 more
doaj +2 more sources
Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe [PDF]
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe.
V. M. Katerynchuk +5 more
doaj +2 more sources
Growth and characterization of InSe/Ge/InSe interfaces
Abstract In the current study, we report the effect of insertion of a 200 nm thick Ge film between two layers of InSe. The Ge sandwiched InSe films are studied by means of X-ray diffraction technique, energy dispersion X-ray spectroscopy attached to a scanning electron microscope, optical spectrophotometry and light power dependent photoconductivity.
S.E. Al Garni +2 more
openaire +2 more sources
Heterostructures manufactured by annealing of InSe monocrystals in sulfur vapor [PDF]
InS/InSe heterostructures were created by a long-term (during 120 h) thermal processing of InSe monocrystals in sulfur vapor. Investigations of electrical and photoelectric properties of structures manufactured by this method showed essential advantage ...
Kovalyuk Z. D. +3 more
doaj +3 more sources
Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure
Enhancement of hole mobility in InSe monolayer by forming an InSe/BP vdW heterostructure with type-II band alignment.
Yi-min Ding +9 more
openaire +3 more sources
DFT Exploration of a Pd-Doped InSe Monolayer as a Novel Gas Sensing Candidate upon SF6 Decomposition: SO2, SOF2, and SO2F2 [PDF]
Monitoring SF6 decomposition gases has emerged as a vital diagnostic technique for evaluating insulation conditions and identifying faults in SF6-based electrical equipment.
Xu Yang, Hao Cui, Zhongchao Liu, Yun Liu
doaj +2 more sources
Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors
In this work, (n)InSe/(p)ZnSe and (n)InSe/(p)ZnSe/(n)InSe heterojunction thin film transistor (TFT) devices are produced by the thermal evaporation technique. They are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy and optical spectroscopy techniques. While the InSe films are
S. E. Al Garni, A. F. Qasrawi
openaire +2 more sources
Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe [PDF]
Building vertical van der Waals heterojunctions between two-dimensional layered materials has become a promising strategy for modulating the properties of two-dimensional materials. Herein, we investigate the electronic structures of non-twisted/twisted bilayer InSe/InSe and heterobilayer graphene/InSe (Gr/InSe) by employing density functional theory ...
Xiaojing Yao, Xiuyun Zhang
openaire +3 more sources
A high-performance water-cooled micro heat sink for the thermal management of high heat flux microelectronics was designed, fabricated, and tested. The heat sink design leverages a multi- metal electrodeposition additive manufacturing process to produce ...
R. Kempers +4 more
doaj +1 more source

