Results 11 to 20 of about 5,450 (225)

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions [PDF]

open access: yesMaterials Research, 2021
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique.
Latifah Hamad Khalid Alfhaid   +2 more
doaj   +1 more source

Effect of Substrate Roughness on the Friction and Wear Behaviors of Laser-Induced Graphene Film

open access: yesLubricants, 2022
A rough substrate usually induces severe detriments limiting the performance of anti-friction materials that would lead to an increase in both the friction coefficient and wear rate.
Peidong Xue, Zhiquan Huang, Cheng Chen
doaj   +1 more source

Ultrahigh responsive negative photoconductivity photodetector based on multilayer graphene/InSe van der Waals heterostructure

open access: yesJournal of Science: Advanced Materials and Devices, 2022
Negative photoconductivity (NPC) exhibits great potential in the field of photodetection due to low power consumption and high response. Herein, the photodetectors based on InSe and multilayer graphene (MLG)/InSe van der Waals heterostructure are ...
Boyao Cui   +8 more
doaj   +1 more source

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

open access: yesFrontiers in Materials, 2022
A two-dimensional (2D) material known as indium selenide (InSe) is widely considered a promising layered semiconductor with potential applications in electronics and optoelectronics. However, the single phase of InSe is still a challenge due to the close
Sheng-Wei Hsiao   +8 more
doaj   +1 more source

Photon excitation effect on formation of graphene nanocrystallites during carbon film growth process

open access: yesAIP Advances, 2022
In this article, we propose a method to deposit nanocrystallite embedded carbon films by electron cyclotron resonance plasma sputtering with photon irradiation cooperated with electron or Ar+ ion irradiation.
Cheng Chen   +4 more
doaj   +1 more source

Mechanisms of electrical conductivity, quantum capacity and negative capacitance effects in InSe nanohybrid [PDF]

open access: yesBulletin of the Polish Academy of Sciences: Technical Sciences, 2022
In this work, we present findings on the syntheses and study of properties of InSe nanohybrid. The introduction of guest component in GaSe matrix leads to an increase in inhomogeneities, which is clearly confirmed by the strengthening of the low ...
Fedir Ivashchyshyn   +8 more
doaj   +1 more source

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

open access: yesNanomaterials, 2022
Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are
Chia-Hsing Wu   +7 more
doaj   +1 more source

Гомоперехід n-InSe–p-InSe : Cd з ефективністю 2,8 % [PDF]

open access: yes, 2015
Шаруватий кристал InSe (група А3В6) є привабливим матеріалом для перетворювачів сонячної енергії внаслідок високої фоточутливості та оптимальної ширини забороненої зони (1,2 еВ).
Сидор, О.М.
core   +2 more sources

High Electrochemical Activity Induced by Doping Oxygen in Graphene Sheets Embedded Carbon Film

open access: yesAdvanced Materials Interfaces, 2020
In this work, the high electrochemical activity induced by doping different contents of oxygen on the surface of graphene sheets embedded carbon (GSEC) film is studied, which is prepared by electron cyclotron resonance (ECR) plasma sputtering system ...
Yuanyuan Cao   +2 more
doaj   +1 more source

Strong Anisotropy of Multilayer γ‐InSe‐Enabled Polarization Division Multiplexing Photodetection

open access: yesAdvanced Photonics Research, 2022
Polarized light detection is consequential for optical communication and polarized light imaging. InSe is considered a promising candidate for narrow‐bandgap photodetector. However, monolayer γ‐InSe is an indirect bandgap semiconductor and is ignored for
Xusheng Wang   +6 more
doaj   +1 more source

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