Results 41 to 50 of about 7,711 (227)

Glutaredoxine reduzieren schnell Glutathionhydroper‐ und Glutathionpolysulfide

open access: yesAngewandte Chemie, EarlyView.
Glutaredoxine (Grx) reduzieren Glutathionpolysulfide (GSSnSG) schnell zu Glutathionhydroper/polysulfiden (GSSnH) oder GSSnH zu Wasserstoff(poly)sulfiden (H2Sn). Die Reduktion glutathionylierter Grx durch reduziertes Glutathion (GSH) liefert Glutathiondisulfid (GSSG).
Philipp Reinert   +6 more
wiley   +1 more source

Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars [PDF]

open access: yes, 2020
Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing.
Lijun Zhang   +28 more
core   +1 more source

Methanolzersetzung auf TiO2 unter Umgebungsbedingungen: Kooperativer Protonentransfer an hydratisierten Grenzflächen

open access: yesAngewandte Chemie, EarlyView.
Unter Umgebungsbedingungen wird die TiO2‐Oberfläche durch adsorbierte Hydroxylgruppen (OH) und Wassermoleküle hydratisiert. Diese Oberflächenhydratation fördert die Methanolzersetzung und macht den ersten Deprotonierungsschritt im Vergleich zu idealen UHV‐Bedingungen nahezu barrierefrei. Unter UV‐Beleuchtung erleichtert die Oberflächenhydratation zudem
Milad Salarinasab   +12 more
wiley   +1 more source

Thickness identification of thin InSe by optical microscopy methods [PDF]

open access: yes, 2020
Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit.
Sergio Puebla (13805254)   +5 more
core   +2 more sources

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

open access: yesAdvanced Electronic Materials, 2022
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder   +8 more
doaj   +1 more source

Effect of Graphene Sheets Embedded Carbon Films on the Fretting Wear Behaviors of Orthodontic Archwire–Bracket Contacts

open access: yesNanomaterials, 2022
Carbon films were fabricated on the orthodontic stainless steel archwires by using a custom-designed electron cyclotron resonance (ECR) plasma sputtering deposition system under electron irradiation with the variation of substrate bias voltages from +5 V
Pengfei Wang   +4 more
doaj   +1 more source

Ein portalpräorganisiertes Cucurbit[7]uril‐Ruthenium‐Konjugat ermöglicht motivselektive Proteindetektion

open access: yesAngewandte Chemie, EarlyView.
Die gezielte Veränderung der Erkennungsumgebung am Portal von Cucurbit[7]uril (CB7) wandelt einen Wirt ohne intrinsisches optisches Signal in einen motivselektiven photolumineszenten Rezeptor um. Das am Portal vororganisierte CB7‐Rubpy‐Konjugat zeigt Änderungen der Zugänglichkeit aromatischer Motive unmittelbar an und ermöglicht dadurch die optische ...
Patrick Gruhs   +10 more
wiley   +1 more source

Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures

open access: yesnpj 2D Materials and Applications
Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS2 and bulk InSe was developed.
Michael A. Altvater   +10 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam   +3 more
wiley   +1 more source

-type InSe

open access: yes, 1996
The magnetoresistance and the Hall-effect measurements in undoped n-InSe (InSe) and Er-doped InSe (InSe:Er) samples in the temperature range 10-340 K were carried out.
YILDIRIM, Muhammet   +11 more
core   +1 more source

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