Results 51 to 60 of about 5,450 (225)

Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

Advanced Physics Research, EarlyView.
Active reactance in electro‐thermal memristors emerges intrinsically from rapid thermal switching of device resistance, linking current‐controlled and voltage‐controlled negative differential resistance to neuronal spiking dynamics. Opposing temperature coefficients of resistance give rise to active inductive or capacitive responses, enabling tunable ...
Fatme Jardali, Gwyneth Svatek, R. Stanley Williams, Timothy D. Brown, Patrick J. Shamberger   +4 more
wiley   +1 more source

RECEPTORI DE RADIAŢIE PE FILME MONOCRISTALINE DE InSe

Studia Universitatis Moldaviae: Stiinte reale si ale naturii, 2009
In this work the possibility of elaboration of the radiation receptors based on InSe is demonstrated. Particularly the roentgen resistors, spectral and polarizational photoresistors based on layered InSe are studied. The doping of the InSe crystals with
USM ADMIN
doaj  

Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures

npj 2D Materials and Applications
Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS2 and bulk InSe was developed.
Michael A. Altvater, Christopher E. Stevens, Nicholas A. Pike, Joshua R. Hendrickson, Rahul Rao, Sergiy Krylyuk, Albert V. Davydov, Deep Jariwala, Ruth Pachter, Michael Snure, Nicholas R. Glavin   +10 more
doaj   +1 more source

Non-layered InSe nanocrystalline bulk materials with ultra-low thermal conductivity

Journal of Materiomics
Exploring new prototypes for a given chemical composition is of great importance and interest to several disciplines. As a famous semiconducting binary compound, InSe usually exhibits a two-dimensional layered structure with decent physical and ...
Yifei Liu, Tian-Ran Wei, Jiangtao Wu, Hexige Wuliji, Haoran Huang, Zhengyang Zhou, Kunpeng Zhao, Jie Ma, Xun Shi   +8 more
doaj   +1 more source

Mass attenuation coefficients for n-type InSe, InSe : Gd, InSe : Ho and InSeEr single crystals

, 2005
Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746-40.930 keV X-ray energies with energy dispersive X-ray ...
ERZENEOGLU, S, Gurbulak, Bekir, Icelli, O, Icelli, Orhan, Erzeneoglu, Salih Zeki, GURBULAK, B   +5 more
core   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Gap-Surface Plasmon-Enhanced Photoluminescence of InSe

, 2023
2D materials, with distinct characteristics compared to their conventional bulk counterparts, have been a popular topic in various optoelectronic research fields.
Yan, W, Kim, S, Bullock, J, Lee, HY, Crozier, KB, Nelson, D   +5 more
core   +1 more source

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source

Engineering the electronic structure of inse and inse/tmd devices

, 2023
August 2023School of EngineeringEngineering the band structure is a technique that is used to modify semiconductors in modern electronic devices.
Ray, Essance, L
core  

Flexibilizing inorganic thermoelectrics

FlexMat, EarlyView.
This perspective reviews advances in flexible inorganic thermoelectric materials, covering ductile bulks, thin films, and fibers/yarns. It highlights strategies like warm metalworking, van der Waals material screening, orientation and sandwich engineering, and device integration, offering pathways to combine flexibility and performance for wearable ...
Xiao‐Lei Shi, Nan‐Hai Li, Meng Li, Zhi‐Gang Chen   +3 more
wiley   +1 more source