Results 31 to 40 of about 5,461 (227)

Engineering the electronic structure of inse and inse/tmd devices [PDF]

open access: yes, 2023
August 2023School of EngineeringEngineering the band structure is a technique that is used to modify semiconductors in modern electronic devices.
Ray, Essance, L
core  

Indium Selenide/Indium Tin Oxide Hybrid Films for Solution‐Processed Photoelectrochemical‐Type Photodetectors in Aqueous Media

open access: yesAdvanced Materials Interfaces, 2023
2D metal monochalcogenides have recently attracted interest for photoelectrochemical (PEC) applications in aqueous electrolytes. Their optical bandgap in the visible and near‐infrared spectral region is adequate for energy conversion and photodetection ...
Gabriele Bianca   +12 more
doaj   +1 more source

Influence of Ce, Nd, Eu and Tm Dopants on the Properties of InSe Monolayer: A First-Principles Study

open access: yesNanomaterials, 2021
Doping of foreign atoms may substantially alter the properties of the host materials, in particular low-dimension materials, leading to many potential functional applications.
Zhi Xie, Limin Chen
doaj   +1 more source

Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance [PDF]

open access: yes, 2022
Two-dimensional (2D) materials provide a new strategy for developing photodetectors at the nanoscale. The electronic and optical properties of black phosphorus (BP), indium selenide (InSe) monolayer and BP/InSe heterojunction were investigated via first ...
Wan, Mingjie   +7 more
core   +1 more source

Photosensitive CuFeO2 / n-InSe heterojunctions [PDF]

open access: yes, 2023
Indium monoselenide InSe has a band gap Eg = 1.2 eV which is in the range of optimal values for photoelectric conversion of the solar spectrum in terrestrial conditions.
Tkachuk, I.G.
core  

Optoelectronic properties of the InSe/Ga2S3 interfaces

open access: yesResults in Physics, 2018
In this work, the nature of formation, the structural, optical and optoelectronic properties of the InSe/Ga2S3 interfaces are explored by the Scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, optical spectrophotometry and ...
Najla M. Khusayfan, Hazem K. Khanfar
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

El Redactor del Inse / Año III / Edición No. 12 / 1978 [PDF]

open access: yes, 1978
16 páginas contiene ilustraciones y gráficosEsta edición contiene los siguientes títulos: Un periodista del INSE en las armas -- Bolsa de empleos para universitarios, por Rosa Leonor Gómez -- Lo que no se muestra de Bogotá -- Análisis del marxismo III --
INSE
core  

Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties

open access: yesNanomaterials, 2019
Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported.
David K. Sang   +9 more
doaj   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

open access: yesAdvanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao   +6 more
wiley   +1 more source

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