Results 31 to 40 of about 5,461 (227)
Engineering the electronic structure of inse and inse/tmd devices [PDF]
August 2023School of EngineeringEngineering the band structure is a technique that is used to modify semiconductors in modern electronic devices.
Ray, Essance, L
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2D metal monochalcogenides have recently attracted interest for photoelectrochemical (PEC) applications in aqueous electrolytes. Their optical bandgap in the visible and near‐infrared spectral region is adequate for energy conversion and photodetection ...
Gabriele Bianca +12 more
doaj +1 more source
Influence of Ce, Nd, Eu and Tm Dopants on the Properties of InSe Monolayer: A First-Principles Study
Doping of foreign atoms may substantially alter the properties of the host materials, in particular low-dimension materials, leading to many potential functional applications.
Zhi Xie, Limin Chen
doaj +1 more source
Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance [PDF]
Two-dimensional (2D) materials provide a new strategy for developing photodetectors at the nanoscale. The electronic and optical properties of black phosphorus (BP), indium selenide (InSe) monolayer and BP/InSe heterojunction were investigated via first ...
Wan, Mingjie +7 more
core +1 more source
Photosensitive CuFeO2 / n-InSe heterojunctions [PDF]
Indium monoselenide InSe has a band gap Eg = 1.2 eV which is in the range of optimal values for photoelectric conversion of the solar spectrum in terrestrial conditions.
Tkachuk, I.G.
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Optoelectronic properties of the InSe/Ga2S3 interfaces
In this work, the nature of formation, the structural, optical and optoelectronic properties of the InSe/Ga2S3 interfaces are explored by the Scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, optical spectrophotometry and ...
Najla M. Khusayfan, Hazem K. Khanfar
doaj +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
El Redactor del Inse / Año III / Edición No. 12 / 1978 [PDF]
16 páginas contiene ilustraciones y gráficosEsta edición contiene los siguientes títulos: Un periodista del INSE en las armas -- Bolsa de empleos para universitarios, por Rosa Leonor Gómez -- Lo que no se muestra de Bogotá -- Análisis del marxismo III --
INSE
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Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported.
David K. Sang +9 more
doaj +1 more source
Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao +6 more
wiley +1 more source

