Results 31 to 40 of about 8,046 (218)

Influence of Ce, Nd, Eu and Tm Dopants on the Properties of InSe Monolayer: A First-Principles Study

open access: yesNanomaterials, 2021
Doping of foreign atoms may substantially alter the properties of the host materials, in particular low-dimension materials, leading to many potential functional applications.
Zhi Xie, Limin Chen
doaj   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

open access: yesAdvanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao   +6 more
wiley   +1 more source

Super-Low Friction Electrification Achieved on Polytetrafluoroethylene Films-Based Triboelectric Nanogenerators Lubricated by Graphene-Doped Silicone Oil

open access: yesMicromachines, 2023
The novel proposal of Wang’s triboelectric nanogenerator (TENG) has inspired extensive efforts to explore energy harvesting devices from the living environment for the upcoming low-carbon society.
Junzhao Chen   +3 more
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +1 more source

Indium Selenide/Indium Tin Oxide Hybrid Films for Solution‐Processed Photoelectrochemical‐Type Photodetectors in Aqueous Media

open access: yesAdvanced Materials Interfaces, 2023
2D metal monochalcogenides have recently attracted interest for photoelectrochemical (PEC) applications in aqueous electrolytes. Their optical bandgap in the visible and near‐infrared spectral region is adequate for energy conversion and photodetection ...
Gabriele Bianca   +12 more
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

open access: yesAdvanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

The creation of heterostructures n-InSe-graphite [PDF]

open access: yes, 2016
В даній роботі представлено створення гетероструктури n-InSe-графіт на основі шаруватого кристала InSe за допомогою олівця марки 4 в. Було виміряно вольт-амперні та вольт-фарадні характеристики даної структури, досліджено спектр фоточутливості, та ...
Ткачук, І.Г.   +5 more
core   +2 more sources

Thermo-, magneto- and photo- dependent electrical properties of hierarchical InSe> supramolecular compound [PDF]

open access: yesBulletin of the Polish Academy of Sciences: Technical Sciences, 2020
The hierarchical structure of InSe composition with 4-fold grade expansion was synthesized with the intercalation-deintercalation technique. Electrical properties of the structure obtained were examined using impedance and thermostimulated current ...
T. Popławski, I. Bordun, A. Pidluzhna
doaj   +1 more source

Highly Stable and Non‐Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep‐Potential Floating Gate

open access: yesAdvanced Science, EarlyView.
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei   +6 more
wiley   +1 more source

Glutaredoxine reduzieren schnell Glutathionhydroper‐ und Glutathionpolysulfide

open access: yesAngewandte Chemie, EarlyView.
Glutaredoxine (Grx) reduzieren Glutathionpolysulfide (GSSnSG) schnell zu Glutathionhydroper/polysulfiden (GSSnH) oder GSSnH zu Wasserstoff(poly)sulfiden (H2Sn). Die Reduktion glutathionylierter Grx durch reduziertes Glutathion (GSH) liefert Glutathiondisulfid (GSSG).
Philipp Reinert   +6 more
wiley   +1 more source

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