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Enhanced photoresponsivity of InSe photodetector by molecular doping [PDF]
, 2020 InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range.
Li, Daqing +6 more
core +1 more source
Nanophotonics, 2020 Indium selenide (InSe) film, an emerging two-dimensional chalcogenide semiconductor, has recently attracted growing interests in optoelectronics. However, its nonlinear characteristics and application potentials in mid-infrared (IR) region remain open ...
Hai Ting +9 more
doaj +1 more source
Cumhuriyet Science Journal, 2019 Structural, morphological andoptical properties of undoped and boron doped Indium Selenide (InSe) thin filmsgrown on glass and layered Gallium Selenide (GaSe) single crystal substrateswith SILAR method have been investigatedby XRD, AFM and UV-Vis ...
Hüseyin Ertap +2 more
doaj +1 more source
, 1996 The magnetoresistance and the Hall-effect measurements in undoped n-InSe (InSe) and Er-doped InSe (InSe:Er) samples in the temperature range 10-340 K were carried out.
YILDIRIM, Muhammet +11 more
core +1 more source
Dynamic carrier transports and low thermal conductivity in n‐type layered InSe thermoelectrics
Aggregate, 2021 Semiconductor InSe with wide bandgap and layered crystal structure is expected to be a promising thermoelectric material, and its excellent plasticity brings great potential applications in flexible and wearable thermoelectric devices.
Haonan Shi +3 more
doaj +1 more source
2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics
Nanomaterials, 2022 The BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP.
Yiqing Shu +9 more
doaj +1 more source
Mass attenuation coefficients for n-type InSe, InSe : Gd, InSe : Ho and InSeEr single crystals [PDF]
, 2005 Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746-40.930 keV X-ray energies with energy dispersive X-ray ...
ERZENEOGLU, S +5 more
core +1 more source
A wicked heat pipe fabricated using metal additive manufacturing
International Journal of Thermofluids, 2021 Additive Manufacturing (AM) has emerged as a high-potential manufacturing technology for fabricating all-in-one heat exchange devices that incorporate embedded two-phase heat transport and spreading systems.
A.J. Robinson +4 more
doaj +1 more source
Gap-Surface Plasmon-Enhanced Photoluminescence of InSe [PDF]
, 2023 2D materials, with distinct characteristics compared to their conventional bulk counterparts, have been a popular topic in various optoelectronic research fields.
Yan, W +5 more
core +1 more source
Defects and oxidation resilience in InSe [PDF]
Physical Review B, 2017 We use density functional theory to study intrinsic defects and oxygen related defects in indium selenide. We find that ${InSe}$ is prone to oxidation, but however not reacting with oxygen as strongly as phosphorene. The dominant intrinsic defects in ${In}$-rich material are the ${In}$ interstitial, a shallow donor, and the ${Se}$ vacancy, which ...
Xiao, KaiJian +2 more
openaire +2 more sources