Results 21 to 30 of about 8,046 (218)

Strong Anisotropy of Multilayer γ‐InSe‐Enabled Polarization Division Multiplexing Photodetection

open access: yesAdvanced Photonics Research, 2022
Polarized light detection is consequential for optical communication and polarized light imaging. InSe is considered a promising candidate for narrow‐bandgap photodetector. However, monolayer γ‐InSe is an indirect bandgap semiconductor and is ignored for
Xusheng Wang   +6 more
doaj   +1 more source

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

open access: yesNanomaterials, 2021
The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a ...
Yadong Zhang   +6 more
doaj   +1 more source

Indium selenide film: a promising saturable absorber in 3- to 4-μm band for mid-infrared pulsed laser

open access: yesNanophotonics, 2020
Indium selenide (InSe) film, an emerging two-dimensional chalcogenide semiconductor, has recently attracted growing interests in optoelectronics. However, its nonlinear characteristics and application potentials in mid-infrared (IR) region remain open ...
Hai Ting   +9 more
doaj   +1 more source

Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method

open access: yesCumhuriyet Science Journal, 2019
Structural, morphological andoptical properties of undoped and boron doped Indium Selenide (InSe) thin filmsgrown on glass and layered Gallium Selenide (GaSe) single crystal substrateswith SILAR method have been investigatedby XRD, AFM and UV-Vis ...
Hüseyin Ertap   +2 more
doaj   +1 more source

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

open access: yesNanomaterials, 2022
Interface interactions in 2D vertically stacked heterostructures play an important role in optoelectronic applications, and photodetectors based on graphene/InSe heterostructures show promising performance nowadays.
Jialin Li   +6 more
doaj   +1 more source

A wicked heat pipe fabricated using metal additive manufacturing

open access: yesInternational Journal of Thermofluids, 2021
Additive Manufacturing (AM) has emerged as a high-potential manufacturing technology for fabricating all-in-one heat exchange devices that incorporate embedded two-phase heat transport and spreading systems.
A.J. Robinson   +4 more
doaj   +1 more source

Enhanced photoresponsivity of InSe photodetector by molecular doping

open access: yes, 2020
InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range.
Li, Daqing   +13 more
core   +1 more source

2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics

open access: yesNanomaterials, 2022
The BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP.
Yiqing Shu   +9 more
doaj   +1 more source

Defects and oxidation resilience in InSe [PDF]

open access: yesPhysical Review B, 2017
We use density functional theory to study intrinsic defects and oxygen related defects in indium selenide. We find that ${InSe}$ is prone to oxidation, but however not reacting with oxygen as strongly as phosphorene. The dominant intrinsic defects in ${In}$-rich material are the ${In}$ interstitial, a shallow donor, and the ${Se}$ vacancy, which ...
Xiao, KaiJian   +2 more
openaire   +2 more sources

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

open access: yes, 2021
Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties.
Nguyen, Thi Huong   +33 more
core   +1 more source

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