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Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure
Nanomaterials, 2022 Interface interactions in 2D vertically stacked heterostructures play an important role in optoelectronic applications, and photodetectors based on graphene/InSe heterostructures show promising performance nowadays.
Jialin Li +6 more
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Nanophotonics, 2020 Indium selenide (InSe) film, an emerging two-dimensional chalcogenide semiconductor, has recently attracted growing interests in optoelectronics. However, its nonlinear characteristics and application potentials in mid-infrared (IR) region remain open ...
Hai Ting +9 more
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Cumhuriyet Science Journal, 2019 Structural, morphological andoptical properties of undoped and boron doped Indium Selenide (InSe) thin filmsgrown on glass and layered Gallium Selenide (GaSe) single crystal substrateswith SILAR method have been investigatedby XRD, AFM and UV-Vis ...
Hüseyin Ertap +2 more
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Photosensitive CuFeO2 / n-InSe heterojunctions [PDF]
, 2023 Indium monoselenide InSe has a band gap Eg = 1.2 eV which is in the range of optimal values for photoelectric conversion of the solar spectrum in terrestrial conditions.
Tkachuk, I.G.
core +1 more source
Dynamic carrier transports and low thermal conductivity in n‐type layered InSe thermoelectrics
Aggregate, 2021 Semiconductor InSe with wide bandgap and layered crystal structure is expected to be a promising thermoelectric material, and its excellent plasticity brings great potential applications in flexible and wearable thermoelectric devices.
Haonan Shi +3 more
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A wicked heat pipe fabricated using metal additive manufacturing
International Journal of Thermofluids, 2021 Additive Manufacturing (AM) has emerged as a high-potential manufacturing technology for fabricating all-in-one heat exchange devices that incorporate embedded two-phase heat transport and spreading systems.
A.J. Robinson +4 more
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2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics
Nanomaterials, 2022 The BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP.
Yiqing Shu +9 more
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Defects and oxidation resilience in InSe [PDF]
Physical Review B, 2017 We use density functional theory to study intrinsic defects and oxygen related defects in indium selenide. We find that ${InSe}$ is prone to oxidation, but however not reacting with oxygen as strongly as phosphorene. The dominant intrinsic defects in ${In}$-rich material are the ${In}$ interstitial, a shallow donor, and the ${Se}$ vacancy, which ...
Xiao, KaiJian +2 more
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Enhanced photoresponsivity of InSe photodetector by molecular doping
, 2020 InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range.
Li, Daqing +6 more
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Influence of Ce, Nd, Eu and Tm Dopants on the Properties of InSe Monolayer: A First-Principles Study
Nanomaterials, 2021 Doping of foreign atoms may substantially alter the properties of the host materials, in particular low-dimension materials, leading to many potential functional applications.
Zhi Xie, Limin Chen
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