Results 141 to 150 of about 1,189 (183)
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Low dislocation density GaAs grown by the vertical Bridgman technique
Journal of Materials Research, 1990We have developed a new growth process for GaAs that combines advantages found in several methods currently in commercial use, while at the same time minimizing many of the problems inherent in these presently used processes. The new technique, a form of vertical Bridgman (VB) growth, is capable of producing either doped (semiconducting) or undoped ...
R. E. Kremer +3 more
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Nanohardness and Young’s modulus of YBCO samples textured by the Bridgman technique
Nanotechnology, 2007Mechanical properties of the orthorhombic phase of YBa2Cu3O7−δ (Y123) at room temperature have been investigated at different applied loads: 5, 10, 30 and 100 mN using a nanoindentation technique. This study was carried out for different monodomains on the (001) plane for textured Bridgman samples with dispersed particles of Y211 as pinning centres ...
J J Roa +4 more
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Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique
Crystal Research and Technology, 2013AbstractSnS is a promising candidate as PV absorber material according to the material properties and the Loferski diagram, but despite the numerous publications on this material, the intrinsic material properties are widely unknown and the theoretical possible values for efficiency are still far away from those achieved in reality.
Sorgenfrei, Tina +3 more
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A uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman technique
Semiconductor Science and Technology, 1992The authors have carried out a uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman method. They have employed A/B etching, EL2 mapping and near-bandgap absorption (reverse contrast, RC) mapping to reveal dislocations and non-uniformities in concentrations of two specific point defects: neutral EL2 centres and ...
STIRLAND, DJ +3 more
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Charge transport properties of Tl2GaInSe4 prepared by Bridgman technique
Superlattices and Microstructures, 2014Abstract Electronic transport properties of Tl 2 GaInSe 4 prepared by Bridgman technique have been investigated by Dc electrical conductivity and Hall coefficient measurements. Tl 2 GaInSe 4 crystal was prepared by a special design based on Bridgman technique.
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Vertical bridgman techniques to homogenize zinc composition of CdZnTe substrates
Journal of Electronic Materials, 1995In order to improve the Zn homogeneity along the axial direction of CdZnTe boule, we have employed a modified Bridgman technique using a (Cd, Zn) alloy source in communication with the melt, whose temperature has been gradually changed from 800 to 840°C during growth. Electron probe microanalysis (EPMA) measurements of Zn composition in the boule shows
T. S. Lee +8 more
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Application of eddy current technique to vertical bridgman growth of CdZnTe
Journal of Electronic Materials, 1996The eddy current technique was used to reveal the interface shape during vertical Bridgman growth of CdZnTe and to follow changes in the properties of the solidified ingot as it was cooled to room temperature after growth. Experiments were performed where partially solidified charges were decanted to show the interface shape.
R. Shetty, C. K. Ard, J. P. Wallace
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Distribution of Te in GaSb grown by Bridgman technique under microgravity
Journal of Crystal Growth, 2000Te concentration in GaSb grown under microgravity was measured by spatially resolved photoluminescence (SRPL). For this purpose, a calibration curve is experimentally obtained to give a relationship between Te concentration and PL energy. It was found that after the growth starts the Te concentration drops at the melted and unmelted interface and ...
T Nakamura, T Nishinaga, P Ge, C Huo
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Characterization of Cadmium Zinc Tellurium Obtained by Modified - Bridgman Technique
MRS Proceedings, 1993AbstractThe growth of ternary semiconductor compounds Cd1-ZZnx. Te leads to possible uses of this material like optoelectronic devices. In the present work we report the structural characterization of Cd0.96Zn0.04Te obtained by modified - Bridgman technique.
D.R. Acosta, F. Rabago
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Segregation in Pb1−xSnx Te during solidification by the Bridgman technique
Journal of Materials Science, 1979The influence of the growth parameters on the concentration gradient of Pb1−xSnxTe monocrystals grown by the vertical Bridgman technique is described. The concentration profiles of all three constituents (Pb, Sn, Te) have been analysed in ingots having different Pb-Sn ratios and grown under different conditions.
V. Fano, R. Pergolari, L. Zanotti
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