Results 151 to 160 of about 1,189 (183)

Magnetic Spinel Single Crystals by Bridgman Technique

1978
In connection with the recent trend of making advantageous use of single crystals of magnetic spinel for the design and manufacture of electronic devices and components, interest has been focused on the Bridgman process of growing crystals with particular emphasis on growing large crystals or improving the products in quality and mass-productivity.
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Bridgman growth of Rb2MnCl4 via accelerated crucible rotation technique

Journal of Crystal Growth, 1983
The Accelerated Crucible Rotation Technique (ACRT) was applied to the Bridgman growth of (incongruently melting) Rb2MnCl4 from non-stroichiometric melts. ACRT mixing allowed us to increase the crystal growth rates by at least a factor of four compared to the maximum growth rate, in order to obtain inclusion-free crystals, without stirring. The existing
A. Horowitz, D. Gazit, J. Makovsky, L. Ben-Dor   +3 more
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Single Crystal Growth of Yttrium Orthoferrite by a Seeded Bridgman Technique

Journal of Applied Physics, 1971
Single crystals of yttrium orthoferrite (YFeO3) 15 mm in diameter and 28-mm long have been grown from pure Y2O3–Fe2O3 melts contained in platinum crucibles. At the melting point of YFeO3, 1680±5°C, the equilibrium oxygen pressure over the Y2O3–Fe2O3 system is approximately one atmosphere, hence a modified Bridgman technique was used.
S. L. Blank, L. K. Shick, J. W. Nielsen
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Charge carrier transport mechanisms in CdZnTe detectors grown by the vertical Bridgman technique

2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2015
In this work, we report on the results of electrical characterization of CdZnTe (CZT) detectors, with gold electroless contacts, grown by the boron oxide encapsulated vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), have the same electrode layout: the anode is a
TURTURICI, Accursio Antonio, ABBENE, Leonardo, GERARDI, Gaetano, Benassi, G., Calestani, D., Zambelli, N., RASO, Giuseppe, Zappettini, A., PRINCIPATO, Fabio   +8 more
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Characterization of high Zn content Cd0.87Zn0.13Te0.98Se0.02 grown using Bridgman technique

Applied Radiation and Isotopes
CdZnTe (CZT) is a promising commercial material used as a room-temperature operating semiconductor detector for gamma-ray detection. Recently, CdZnTeSe (CZTS) detectors improved upon the properties of CZT by improving homogeneity and reducing defect properties, thereby enabling higher production yield of high-quality crystals.
Yonghoon Kim, Juyoung Ko, Jangwon Byun, Jiwon Seo, Hye Min Park, Beomjun Park   +5 more
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Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique

Journal of Electronic Materials, 2000
The electron drift mobility of undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman method is measured by a time-of-flight technique. The sample shows a room temperature mobility and mobility lifetime product of 950 cm2/Vs and 1.6 × 10−4cm2/V, respectively. The mobility increases monotonically with decreasing temperature to 3000 cm2/Vs at 100 K.
Kazuhiko Suzuki, S. Seto, A. Iwata, M. Bingo, T. Sawada, K. Imai   +5 more
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Growth and characterization of LiInS[sub 2] single crystal by Bridgman technique

AIP Conference Proceedings, 2013
A LiInS2 single crystal was successfully grown by modified Bridgman - Stockbarger method with steady ampoule rotation. Li element is highly reactive with atmosphere so that graphite was used as crucible. The grown crystal was confirmed by powder diffraction studies. The IR Transmittance of LiInS2 was measured by FTIR.
M. Magesh, A. Arunkumar, P. Vijayakumar, G. Anandha babu, P. Ramasamy   +4 more
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Improved Bridgman technique for the growth of AgGaSe/sub 2/ single crystals

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105), 2002
AgGaSe/sub 2/ crystal growth has been realized by an improved Bridgman technique with only a one-zone vertical growth furnace. The technique is to make the solid-liquid interface move from the bottom to the top of the AgGaSe/sub 2/ melting polycrystalline materials to grow AgGaSe/sub 2/ single crystals by controlling the growth temperature. Boules with
null Xie Guangzhong, null Jianng Yadong, null Wu Zhiming, null Zhu Shifu   +3 more
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Bridgman–Stockbarger Technique

2021
Mark Lifshotz, Alan Symmons
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Photoluminescence of Cd1—xZnxTe Crystals Grown by High-Pressure Bridgman Technique

physica status solidi (a), 1997
Photoluminescence (PL) spectra of detector-grade Cd 1-x Zn x Te crystals with x = 0.07 to 0.14 were measured as a function of the excitation laser power and over the temperature range from 12 to 295 K. Two bound exciton transitions at the energies of 13 and 24 meV below the band-gap E g and a number of phonon replicas dominate the low-temperature PL ...
K. Hjelt, M. Juvonen, T. Tuomi, S. Nenonen, E. E. Eissler, M. Bavdaz   +5 more
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