Results 251 to 260 of about 10,259 (303)

Broadband Linearization of Microwave Power Amplifiers

10th European Microwave Conference, 1980, 1980
In an 11 GHz link line system up to 7 TV channels shall be transmitted with SSB modulation from a single transmitter. The high linearity of the power amplifiers and the frequency converters required for that could be obtained by separate amplitude and phase pre-distortion of the radio signal.
A. Egger, M. Horn, T. Vien
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Broadband switch power amplifier design

2015 IEEE 16th International Conference on Communication Technology (ICCT), 2015
In recent time, class-EF power amplifiers are promising for the high power added efficiency (PAE) by turning output matching network (OMN) to control the even and odd harmonics at the drain. High quality factor (Q) of output matching network in the circuit is required. So it is difficult to design a broadband high efficiency power amplifier.
null Shuai Chen, null Zhiqun Cheng, null Kai Wang, null Hui Wang   +3 more
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Design of a Broadband GaN Power Amplifier

2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018
This paper presents a new GaN broadband and internally matched power amplifier. The coexistent technology of L-section multisession transformer and negative feedback is used. Using one 3.6 mm power GaN HEMT die, made by Nanjing Electronic Devices Institute.
Li Yuchao, Zhong Shichang, Lu Wei
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10W ultra-broadband power amplifier

2008 IEEE MTT-S International Microwave Symposium Digest, 2008
We report the design and performance of an ultra-broadband power amplifier. It achieves 10 Watts output power with 21dB ± 1.5dB gain from 20 MHz to 3000 MHz. At lower frequencies from 20 to 1000 MHz the output power is 15 Watts with 22% efficiency. To achieve this performance, we employ a new design concept to control the device impedance and the power
Amin K. Ezzeddine, Ho C. Huang
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Broadband high power amplifiers for instrumentation

2006 67th ARFTG Conference, 2006
Microwave power amplifiers designed for instrumentation are characterized by a range of properties which sets them apart from other types of applications. Broad bandwidths are generally desired, and so are low noise (both in amplitude and phase), high stability, and low spurious responses.
F.N. Sechi, M. Bujatti
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Broadband doherty power amplifier and linearization

2016 46th European Microwave Conference (EuMC), 2016
This paper will review the recent progress in broadband Doherty power amplifier (PA) and low feedback sampling rate digital predistortion (DPD) techniques. Continuous mode impedance matching method is proposed for Doherty PA for bandwidth enhancement, which utilizes the cross-matching technique to realize the physical output matching network.
Wenhua Chen, Xiaofan Chen, Zonghao Wang
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A Broadband Hybrid Continuous Power Amplifier

2018 IEEE International Conference on Computational Electromagnetics (ICCEM), 2018
A highly efficient and broadband 10W GaN HEMT power amplifier (PA) is presented, which employs the hybrid PA mode, transferring between continuous Class-F and continuous inverse Class-F. A GaN PAis designed and realized based on this mode-transferring operation using the multisection matching transformers.
Chun Ni, Changqing Liu, Mingsheng Chen, Liang Zhang, Zhongxiang Zhang, Xianliang Wu   +5 more
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A broadband power-reconfigurable distributed amplifier

2012 IEEE/MTT-S International Microwave Symposium Digest, 2012
A broadband power-reconfigurable distributed amplifier (DA) is presented, where a triple-stack FET structure is employed as a power-adjustable gain cell. The output power is reconfigured by employing double gate-bias control scheme to the bottom and middle FET's, which maintains the efficiency under power back-off without degrading input and output ...
null Jihoon Kim, null Youngmin Kim, null Sangho Lee, Jinho Jeong, null Youngwoo Kwon   +4 more
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GaN broadband Power Amplifiers for terrestrial and space transmitters

2012 19th International Conference on Microwaves, Radar & Wireless Communications, 2012
This contribution reports several Power Amplifiers (PAs) designed using both GaN-on-Si and GaN-on-SiC technologies provided by Selex-SI foundry. The former is still under development while the other one is more stable and under space qualification procedure.
GIOFRE', ROCCO, COLANTONIO, PAOLO, GIANNINI, FRANCO   +2 more
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Design of powerful broadband transistorized amplifiers

2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469), 2002
The circumscribed mathematical model allows to design powerful broadband transistorized amplifiers (PBTA) by criterion of a minimum of technological losses of manufacture K6, and in case of using operating of monitoring cascades allows to allocate the most significant casual parameters of elements which, for example, can be chosen as, set up with the ...
A.V. Kolotvin, A.V. Pisanko, V.V. Maneev
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