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A Silicon-Based Low-Power Broadband Transimpedance Amplifier
IEEE Transactions on Circuits and Systems I: Regular Papers, 2018The analysis, design, and implementation of a 50-Gb/s transimpedance amplifier (TIA) in a 0.13- $\mu \text{m}$ SiGe BiCMOS process are presented. The proposed TIA, designed for use in a single-channel optical communication network, is comprised of three stages including: 1) a shunt-peaked, shunt-series feedback stage incorporating a transformer ...
Alireza Karimi-Bidhendi +3 more
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Broadband Highly Efficient Doherty Power Amplifiers
IEEE Circuits and Systems Magazine, 2020Modern wireless communication systems with large bandwidth and high peak-to-average power ratios (PAPRs) have been and will continue to be in high demand. This puts a strain on the transmitter, which has to operate with its average power in the output back-off (OBO) region. The Doherty power amplifier (Doherty PA) was invented in 1936 as an alternative
Xin Yu Zhou +3 more
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Millimeter wave transformer coupled low-power and broadband power amplifiers
2016 International Symposium on Integrated Circuits (ISIC), 2016This paper presents two millimeter wave PAs realized in a 130 nm CMOS process. The power amplifier adopts transformer and transmission line matching topology which achieves small area and broadband. One power amplifier focus on low power and the other focus on broadband. The low-power power amplifier operates from 1.2 V supply with 10 dB gain at 62 GHz,
Bo Chen 0014 +4 more
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Broadband high efficiency GaN power amplifier
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2012This paper reports on the design methodology and realization of a hybrid feedback power amplifier using discrete GaN HEMT die with chip & wire technology. The power amplifier was measured to have over 12.8 dB gain with ±0.85dB flatness and higher than 30.7 dBm output power over 100 MHz to 1GHz.
Yijie Qiu +3 more
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Broadband RF SiC MESFET Power Amplifiers
Materials Science Forum, 2005We have designed and characterized preliminary versions of two wideband SiC-based RF power amplifiers using SiC MESFETs from Chalmers University and Lateral Epitaxy SiC MESFETs fabricated at AMDS AB. When optimized transistors are available they will be used in the design of amplifiers for a 100 – 500 MHz multifunction EW system.
Rolf Jonsson, Staffan Rudner
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Noise degradation of cascodes in broadband power amplifiers
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2017This paper compares the noise performance of the common-source and the cascode topology. Although the cascode topology has several advantages over the common-source stage, the noise performance degrades due to the channel noise and the induced gate noise of the common-gate stage.
Thomas Huber +2 more
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A 10W broadband power amplifier for base station
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2012This paper presents the design of a broadband power amplifier with high-efficiency using silicon LDMOSFETs. With comparing frequency response of single LC matching network and two-stage one, a multiple LC matching networks composed of micro-strip lines and capacitors were adopted to enhance the bandwidth.
Dajie Dai +4 more
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A review of GaN HEMT broadband power amplifiers
AEU - International Journal of Electronics and Communications, 2020Abstract The unique material properties of GaN, wide bandgap, high thermal conductivity, high breakdown voltage, high electron mobility and the device properties of GaN HEMT (High Electron Mobility Transistor) namely low parasitic capacitance, low turn on resistance and high cut off frequencies make it a good choice to use in a power amplifier ...
K. Husna Hamza, D. Nirmal
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A 40W ultra broadband LDMOS power amplifier
2015 IEEE MTT-S International Microwave Symposium, 2015An ultra-broadband power amplifier using a Freescale 50V LDMOS device is presented. The power amplifier can deliver 40W PEP power from 2 to 800 MHz with better than 30dBc IM3 at 10 kHz 2-tone spacing. The power gain is 19 dB with ± 1 dB gain flatness across the band at class A operation and 15 dB ± 1 dB gain flatness at class AB configuration, each ...
Kaldi Li +3 more
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260 GHz Broadband Power Amplifier MMIC
2019 12th German Microwave Conference (GeMiC), 2019This paper presents a broadband H-Band (220 -325 GHz) power amplifier in a 35nm InGaAs-based metamorphic high electron mobility transistor technology. The amplifier is realized as a submillimeter-wave monolithic integrated circuit and is designed to drive a high power amplifier in a multi-gigabit communication system or to be implemented in a wideband ...
Benjamin Schoch +4 more
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