Results 141 to 150 of about 917,117 (339)

Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization

Advanced Science, EarlyView.
A thermally robust (≈400 °C), critically small‐size‐simple ligand structure ruthenium (Ru) precursor enables exceptional growth per cycle (≈1.28 Å cycle−1), short incubation (≈8 cycles), ultralow resistivity (8.65 µΩ cm) and outstanding substrate selectivity via atomic layer deposition (ALD) process at high temperatures, overcoming prior Ru‐ALD ...
Hideaki Nakatsubo, Debananda Mohapatra, Eun‐Soo Lee, Jeongha Kim, Iaan Cho, Masato Iseki, Toshiyuki Shigetomi, Ryosuke Harada, Sang‐Woong Na, Taehoon Cheon, Bonggeun Shong, Soo‐Hyun Kim   +11 more
wiley   +1 more source

Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation [PDF]

, 2022
Vinoth Sundaramoorthy, Stephan Wirths, Lars Knoll   +2 more
openalex   +1 more source

Al Nanoparticle‐Decorated Metal Oxide Synaptic Transistors for Ultralow‐Energy Neuromorphic Computing with Wide Dynamic Range

Advanced Science, EarlyView.
A nanoparticle‐engineered electrolyte‐gated memtransistor is introduced as a materials‐level strategy to overcome the intrinsic trade‐off between energy consumption and synaptic precision. By embedding aluminum nanoparticles at the oxide–electrolyte interface to modulate ion trapping dynamics, the device achieves stable multistate plasticity under ...
Jun‐Gyu Choi, Yoonseok Song, Seokhyeon Baek, Jingon Jang, Sungjun Park   +4 more
wiley   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Effect of concentrate percentage on ruminal pH and time-budget in dairy goats

, 2008
Marion Desnoyers, Christine Duvaux-Ponter, Karim Rigalma, Sabine Roussel, Olivier Martin, S. Giger-Reverdin   +5 more
openalex   +1 more source

An EPTAS for Budgeted Matching and Budgeted Matroid Intersection [PDF]

, 2023
Ilan Doron-Arad, Ariel Kulik, Hadas Shachnai   +2 more
openalex   +1 more source

Interface Engineering Suppresses Self‐Annealing in Electroplated Nanograined Copper for Low‐Temperature Copper‐to‐Copper Bonding

Advanced Science, EarlyView.
A (111)‐oriented nanotwinned copper substrate stabilizes the deposited nanograined copper and prevents self‐annealing by restricting grain boundary motion at the interface and promoting the formation of stacking faults within the nanograined copper. Its preserved nanostructure maintains bonding capability even after 30 days of storage, resulting in ...
Gangqiang Peng, Xinyi Dong, Binzhao Li, Chuan He, Cong Chen, Licheng Huang, Jian Liu, Yonghan Zhou, Qikai Li, Hao Gong, Yuechen Wang, Kaiyu Mu, Sheng‐Jye Cherng, Po‐Yen Yang, Yang Lu, Yong Yang, Shih‐Wei Hung, Shien‐Ping Feng   +17 more
wiley   +1 more source

La Nueva Revisión Cuadrienal de la Defensa Estadounidense

Meridiano 47, 2017
In March 2014, the U.S. Department of Defense issued the Quadrennial Defense Review, a document that outlines the country’s defence strategy, the proposed force structure, the budgetary plans and other decisions that will affect the American defence for ...
Guillem Colom Piella
doaj  

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

Advanced Electronic Materials, EarlyView.
Surface engineering of gate dielectrics with fluorinated self–assembled monolayers significantly improves the performance of organic field–effect transistors. In this study, Al2O3 functionalized with fluorinated phosphonic acids reduces contact resistance and hysteresis while achieving near‐zero threshold voltages, offering an alternative to ...
Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas‐Torrent, Esther Barrena   +9 more
wiley   +1 more source

Allocating budget in developing countries, the need to fight corruption: evidence from Sub-Saharan African countries [PDF]

Porto Bazie, Noël Thiombiano, Eugénie Maïga   +2 more
openalex   +1 more source